Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 60

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TJ200F04M3L,LXHQ MOSFET P-CH 40V 200A TO220SM Toshiba Semiconductor and Storage	7,070	-	询价单	数据表	U-MOSVI	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200A (Ta)	6V, 10V	1.8mOhm @ 100A, 10V	Surface Mount	3V @ 1mA	460 nC @ 10 V	40 V	+10V, -20V	1280 pF @ 10 V	-	-	TO-220SM(W)	-	375W (Tc)	175°C
TK20E60W5,S1VX X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	17	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	175mOhm @ 10A, 10V	Through Hole	4.5V @ 1mA	55 nC @ 10 V	600 V	±30V	1800 pF @ 300 V	-	-	TO-220	-	165W (Tc)	150°C
TK100A10N1,S4X MOSFET N-CH 100V 100A TO220SIS Toshiba Semiconductor and Storage	17	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.8mOhm @ 50A, 10V	Through Hole	4V @ 1mA	140 nC @ 10 V	100 V	±20V	8800 pF @ 50 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK39N60W,S1VF MOSFET N CH 600V 38.8A TO247 Toshiba Semiconductor and Storage	20	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	Through Hole	3.7V @ 1.9mA	110 nC @ 10 V	600 V	±30V	4100 pF @ 300 V	-	-	TO-247	-	270W (Tc)	150°C (TJ)
TK065N65Z,S1F MOSFET N-CH 650V 38A TO247 Toshiba Semiconductor and Storage	19	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Ta)	10V	65mOhm @ 19A, 10V	Through Hole	4V @ 1.69mA	62 nC @ 10 V	650 V	±30V	3650 pF @ 300 V	-	-	TO-247	-	270W (Tc)	150°C
TK62N60W,S1VF MOSFET N-CH 600V 61.8A TO247 Toshiba Semiconductor and Storage	8,182	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	61.8A (Ta)	10V	40mOhm @ 30.9A, 10V	Through Hole	3.7V @ 3.1mA	180 nC @ 10 V	600 V	±30V	6500 pF @ 300 V	-	-	TO-247	-	400W (Tc)	150°C (TJ)
TK100L60W,VQ MOSFET N-CH 600V 100A TO3P Toshiba Semiconductor and Storage	3	-	询价单	数据表	DTMOSIV	TO-3PL	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	18mOhm @ 50A, 10V	Through Hole	3.7V @ 5mA	360 nC @ 10 V	600 V	±30V	15000 pF @ 30 V	-	-	TO-3P(L)	-	797W (Tc)	150°C (TJ)
SSM6J213FE(TE85L,F MOSFET P CH 20V 2.6A ES6 Toshiba Semiconductor and Storage	8,793	-	询价单	数据表	U-MOSVI	SOT-563, SOT-666	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	2.6A (Ta)	1.5V, 4.5V	103mOhm @ 1.5A, 4.5V	Surface Mount	1V @ 1mA	4.7 nC @ 4.5 V	20 V	±8V	290 pF @ 10 V	-	-	ES6	-	500mW (Ta)	150°C (TJ)
SSM5H08TU,LF MOSFET N-CH 20V 1.5A UFV Toshiba Semiconductor and Storage	2	-	询价单	数据表	U-MOSIII	6-SMD (5 Leads), Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.5A (Ta)	2.5V, 4V	160mOhm @ 750mA, 4V	Surface Mount	1.1V @ 100µA	-	20 V	±12V	125 pF @ 10 V	-	Schottky Diode (Isolated)	UFV	-	500mW (Ta)	150°C
TK2K2A60F,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	5,328	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3.5A (Ta)	10V	2.2Ohm @ 1.8A, 10V	Through Hole	4V @ 350µA	13 nC @ 10 V	600 V	±30V	450 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C

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