Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 62

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK13A65U(STA4,Q,M) MOSFET N-CH 650V 13A TO220SIS Toshiba Semiconductor and Storage	8,355	-	询价单	数据表	DTMOSII	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	10V	380mOhm @ 6.5A, 10V	Through Hole	5V @ 1mA	17 nC @ 10 V	650 V	±30V	950 pF @ 10 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK4A60D(STA4,Q,M) MOSFET N-CH 600V 4A TO220SIS Toshiba Semiconductor and Storage	5,662	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	10V	1.7Ohm @ 2A, 10V	Through Hole	4.4V @ 1mA	12 nC @ 10 V	600 V	±30V	600 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TPCC8003-H(TE12LQM MOSFET N-CH 30V 13A 8TSON Toshiba Semiconductor and Storage	9,245	-	询价单	数据表	U-MOSVI-H	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	4.5V, 10V	16.9mOhm @ 6.5A, 10V	Surface Mount	2.3V @ 200µA	17 nC @ 10 V	30 V	±20V	1300 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 22W (Tc)	150°C (TJ)
TPCC8008(TE12L,QM) MOSFET N-CH 30V 25A 8TSON Toshiba Semiconductor and Storage	3,239	-	询价单	数据表	U-MOSIV	8-VDFN Exposed Pad	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	4.5V, 10V	6.8mOhm @ 12.5A, 10V	Surface Mount	2.5V @ 1A	30 nC @ 10 V	30 V	±25V	1600 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 30W (Tc)	150°C (TJ)
TK290A60Y,S4X MOSFET N-CH 600V 11.5A TO220SIS Toshiba Semiconductor and Storage	7,408	-	询价单	数据表	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Tc)	10V	290mOhm @ 5.8A, 10V	Through Hole	4V @ 450µA	25 nC @ 10 V	600 V	±30V	730 pF @ 300 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
SSM3J108TU(TE85L) MOSFET P-CH 20V 1.8A UFM Toshiba Semiconductor and Storage	4,079	-	询价单	数据表	U-MOSIII	3-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.8A (Ta)	1.8V, 4V	158mOhm @ 800mA, 4V	Surface Mount	1V @ 1mA	-	20 V	±8V	250 pF @ 10 V	-	-	UFM	-	500mW (Ta)	150°C (TJ)
TK40P03M1(T6RSS-Q) MOSFET N-CH 30V 40A DP Toshiba Semiconductor and Storage	5,686	-	询价单	数据表	U-MOSVI-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	4.5V, 10V	10.8mOhm @ 20A, 10V	Surface Mount	2.3V @ 100µA	17.5 nC @ 10 V	30 V	±20V	1150 pF @ 10 V	-	-	DPAK	-	-	-
TK40P04M1(T6RSS-Q) MOSFET N-CH 40V 40A DP Toshiba Semiconductor and Storage	6,191	-	询价单	数据表	U-MOSVI-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	4.5V, 10V	11mOhm @ 20A, 10V	Surface Mount	2.3V @ 200µA	29 nC @ 10 V	40 V	±20V	1920 pF @ 10 V	-	-	DPAK	-	47W (Tc)	150°C (TJ)
TK4A60DA(STA4,Q,M) MOSFET N-CH 600V 3.5A TO220SIS Toshiba Semiconductor and Storage	3,900	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.5A (Ta)	10V	2.2Ohm @ 1.8A, 10V	Through Hole	4.4V @ 1mA	11 nC @ 10 V	600 V	±30V	490 pF @ 25 V	-	-	TO-220SIS	-	-	150°C (TJ)
TK5A60W,S4VX MOSFET N-CH 600V 5.4A TO220SIS Toshiba Semiconductor and Storage	9,011	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.4A (Ta)	10V	900mOhm @ 2.7A, 10V	Through Hole	3.7V @ 270µA	10.5 nC @ 10 V	600 V	±30V	380 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)

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