Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 63

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK1K7A60F,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	1	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	10V	1.7Ohm @ 2A, 10V	Through Hole	4V @ 460µA	16 nC @ 10 V	600 V	±30V	560 pF @ 300 V	-	-	TO-220SIS	-	35W (Tc)	150°C
TK3R2A08QM,S4X UMOS10 TO-220SIS 80V 3.2MOHM Toshiba Semiconductor and Storage	8,113	-	询价单	数据表	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	92A (Tc)	6V, 10V	3.2mOhm @ 46A, 10V	Through Hole	3.5V @ 1.3mA	102 nC @ 10 V	80 V	±20V	7670 pF @ 40 V	-	-	TO-220SIS	-	45W (Tc)	175°C
TK3A60DA(Q,M) MOSFET N-CH 600V 2.5A TO220SIS Toshiba Semiconductor and Storage	1	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2.5A (Ta)	10V	2.8Ohm @ 1.3A, 10V	Through Hole	4.4V @ 1mA	9 nC @ 10 V	600 V	±30V	380 pF @ 25 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK58A06N1,S4X MOSFET N-CH 60V 58A TO220SIS Toshiba Semiconductor and Storage	4,526	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	5.4mOhm @ 29A, 10V	Through Hole	4V @ 500µA	46 nC @ 10 V	60 V	±20V	3400 pF @ 30 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK16E60W5,S1VX MOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage	4,002	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	230mOhm @ 7.9A, 10V	Through Hole	4.5V @ 790µA	43 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-220	-	130W (Tc)	150°C (TJ)
TK560A65Y,S4X MOSFET N-CH 650V 7A TO220SIS Toshiba Semiconductor and Storage	5	-	询价单	数据表	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	560mOhm @ 3.5A, 10V	Through Hole	4V @ 240µA	14.5 nC @ 10 V	650 V	±30V	380 pF @ 300 V	-	-	TO-220SIS	-	30W	150°C (TJ)
TK7P60W5,RVQ MOSFET N-CH 600V 7A DPAK Toshiba Semiconductor and Storage	3,950	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	670mOhm @ 3.5A, 10V	Surface Mount	4.5V @ 350µA	16 nC @ 10 V	600 V	±30V	490 pF @ 300 V	-	-	DPAK	-	60W (Tc)	150°C (TJ)
TK12E80W,S1X MOSFET N-CH 800V 11.5A TO220 Toshiba Semiconductor and Storage	8,460	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	10V	450mOhm @ 5.8A, 10V	Through Hole	4V @ 570µA	23 nC @ 10 V	800 V	±20V	1400 pF @ 300 V	-	-	TO-220	-	165W (Tc)	150°C
TK100A08N1,S4X MOSFET N-CH 80V 100A TO220SIS Toshiba Semiconductor and Storage	9,581	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.2mOhm @ 50A, 10V	Through Hole	4V @ 1mA	130 nC @ 10 V	80 V	±20V	9000 pF @ 40 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK8A60W5,S5VX MOSFET N-CH 600V 8A TO220SIS Toshiba Semiconductor and Storage	5,085	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	540mOhm @ 4A, 10V	Through Hole	4.5V @ 400µA	22 nC @ 10 V	600 V	±30V	590 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)

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