Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 61

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK1K9A60F,S4X MOSFET N-CH 600V 3.7A TO220SIS Toshiba Semiconductor and Storage	4,302	-	询价单	数据表	U-MOSIX	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3.7A (Ta)	10V	1.9Ohm @ 1.9A, 10V	Through Hole	4V @ 400µA	14 nC @ 10 V	600 V	±30V	490 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C
SSM6J212FE,LF MOSFET P-CH 20V 4A ES6 Toshiba Semiconductor and Storage	7,347	-	询价单	数据表	U-MOSVI	SOT-563, SOT-666	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	1.5V, 4.5V	40.7mOhm @ 3A, 4.5V	Surface Mount	1V @ 1mA	14.1 nC @ 4.5 V	20 V	±8V	970 pF @ 10 V	-	-	ES6	-	500mW (Ta)	150°C (TJ)
SSM3J307T(TE85L,F) MOSFET P-CH 20V 5A TSM Toshiba Semiconductor and Storage	6,514	-	询价单	数据表	U-MOSV	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5A (Ta)	1.5V, 4.5V	31mOhm @ 4A, 4.5V	Surface Mount	1V @ 1mA	19 nC @ 4.5 V	20 V	±8V	1170 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM3K7002BSU,LF MOSFET N-CH 60V 200MA USM Toshiba Semiconductor and Storage	4,299	-	询价单	数据表	-	SC-70, SOT-323	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	200mA (Ta)	4.5V, 10V	2.1Ohm @ 500mA, 10V	Surface Mount	3.1V @ 250µA	-	60 V	±20V	17 pF @ 25 V	-	-	USM	-	150mW (Ta)	150°C (TJ)
SSM4K27CTTPL3 MOSFET N-CH 20V 500MA CST4 Toshiba Semiconductor and Storage	7,954	-	询价单	数据表	U-MOSIII	4-SMD, No Lead	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500mA (Ta)	1.8V, 4V	205mOhm @ 250mA, 4V	Surface Mount	1.1V @ 1mA	-	20 V	±12V	174 pF @ 10 V	-	-	CST4 (1.2x0.8)	-	400mW (Ta)	150°C (TJ)
SSM6J53FE(TE85L,F) MOSFET P-CH 20V 1.8A ES6 Toshiba Semiconductor and Storage	8,871	-	询价单	数据表	-	SOT-563, SOT-666	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.8A (Ta)	1.5V, 2.5V	136mOhm @ 1A, 2.5V	Surface Mount	1V @ 1mA	10.6 nC @ 4 V	20 V	±8V	568 pF @ 10 V	-	-	ES6	-	500mW (Ta)	150°C (TJ)
SSM3J140TU,LXHF SMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage	5,613	-	询价单	数据表	U-MOSVI	3-SMD, Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4.4A (Ta)	1.5V, 4.5V	25.8mOhm @ 4A, 4.5V	Surface Mount	1V @ 1mA	24.8 nC @ 4.5 V	20 V	+6V, -8V	1800 pF @ 10 V	AEC-Q101	-	UFM	Automotive	500mW (Ta)	150°C
TK58E06N1,S1X MOSFET N-CH 60V 58A TO220 Toshiba Semiconductor and Storage	8,657	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Ta)	10V	5.4mOhm @ 29A, 10V	Through Hole	4V @ 500µA	46 nC @ 10 V	60 V	±20V	3400 pF @ 30 V	-	-	TO-220	-	110W (Tc)	150°C (TJ)
TK34A10N1,S4X MOSFET N-CH 100V 34A TO220SIS Toshiba Semiconductor and Storage	6,833	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	34A (Tc)	10V	9.5mOhm @ 17A, 10V	Through Hole	4V @ 500µA	38 nC @ 10 V	100 V	±20V	2600 pF @ 50 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
SSM3K106TU(TE85L) MOSFET N-CH 20V 1.2A UFM Toshiba Semiconductor and Storage	3,371	-	询价单	数据表	π-MOSVI	3-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.2A (Ta)	4V, 10V	310mOhm @ 600mA, 10V	Surface Mount	2.3V @ 100µA	-	20 V	±20V	36 pF @ 10 V	-	-	UFM	-	500mW (Ta)	150°C (TJ)

共 814 条记录«上一页 1... 57 58 59 606162 63 64...82 下一页»