Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 65

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK35N65W,S1F MOSFET N-CH 650V 35A TO247 Toshiba Semiconductor and Storage	5	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Ta)	10V	80mOhm @ 17.5A, 10V	Through Hole	3.5V @ 2.1mA	100 nC @ 10 V	650 V	±30V	4100 pF @ 300 V	-	-	TO-247	-	270W (Tc)	150°C (TJ)
TK62J60W,S1VQ MOSFET N-CH 600V 61.8A TO3P Toshiba Semiconductor and Storage	2	-	询价单	数据表	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	61.8A (Ta)	10V	38mOhm @ 30.9A, 10V	Through Hole	3.7V @ 3.1mA	180 nC @ 10 V	600 V	±30V	6500 pF @ 300 V	-	-	TO-3P(N)	-	400W (Tc)	150°C (TJ)
TPC8134,LQ(S MOSFET P-CH 40V 5A 8SOP Toshiba Semiconductor and Storage	7,056	-	询价单	数据表	U-MOSVI	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	5A (Ta)	4.5V, 10V	52mOhm @ 2.5A, 10V	Surface Mount	2V @ 100µA	20 nC @ 10 V	40 V	+20V, -25V	890 pF @ 10 V	-	-	8-SOP	-	1W (Ta)	150°C (TJ)
TK2Q60D(Q) MOSFET N-CH 600V 2A PW-MOLD2 Toshiba Semiconductor and Storage	8,512	-	询价单	数据表	π-MOSVII	TO-251-3 Stub Leads, IPAK	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	10V	4.3Ohm @ 1A, 10V	Through Hole	4.4V @ 1mA	7 nC @ 10 V	600 V	±30V	280 pF @ 25 V	-	-	PW-MOLD2	-	60W (Tc)	150°C (TJ)
TK10S04K3L(T6L1,NQ MOSFET N-CH 40V 10A DPAK Toshiba Semiconductor and Storage	2,123	-	询价单	数据表	U-MOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	6V, 10V	28mOhm @ 5A, 10V	Surface Mount	3V @ 1mA	10 nC @ 10 V	40 V	±20V	410 pF @ 10 V	-	-	DPAK+	-	25W (Tc)	175°C (TJ)
TK11A60D(STA4,Q,M) MOSFET N-CH 600V 11A TO220SIS Toshiba Semiconductor and Storage	6,995	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	10V	650mOhm @ 5.5A, 10V	Through Hole	4V @ 1mA	28 nC @ 10 V	600 V	±30V	1550 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK15A60D(STA4,Q,M) MOSFET N-CH 600V 15A TO220SIS Toshiba Semiconductor and Storage	2,606	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	10V	370mOhm @ 7.5A, 10V	Through Hole	4V @ 1mA	45 nC @ 10 V	600 V	±30V	2600 pF @ 25 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK16A45D(STA4,Q,M) MOSFET N-CH 450V 16A TO220SIS Toshiba Semiconductor and Storage	6,048	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	16A	-	270mOhm @ 8A, 10V	Through Hole	-	-	450 V	-	-	-	-	TO-220SIS	-	-	-
TK16A55D(STA4,Q,M) MOSFET N-CH 550V 16A TO220SIS Toshiba Semiconductor and Storage	4,421	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta)	-	330mOhm @ 8A, 10V	Through Hole	4V @ 1mA	45 nC @ 10 V	550 V	-	2600 pF @ 25 V	-	-	TO-220SIS	-	-	150°C (TJ)
TK18E10K3,S1X(S MOSFET N-CH 100V 18A TO220-3 Toshiba Semiconductor and Storage	9,959	-	询价单	数据表	U-MOSIV	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	-	42mOhm @ 9A, 10V	Through Hole	-	33 nC @ 10 V	100 V	-	-	-	-	TO-220-3	-	-	150°C (TJ)

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