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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK20P04M1,RQ(SMOSFET N-CH 40V 20A DPAK Toshiba Semiconductor and Storage |
2,536 | - |
|
数据表 |
U-MOSVI-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Ta) | 4.5V, 10V | 29mOhm @ 10A, 10V | Surface Mount | 2.3V @ 100µA | 15 nC @ 10 V | 40 V | ±20V | 985 pF @ 10 V | - | - | DPAK | - | 27W (Tc) | 150°C (TJ) |
|
TK20S04K3L(T6L1,NQMOSFET N-CH 40V 20A DPAK Toshiba Semiconductor and Storage |
4,802 | - |
|
数据表 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Ta) | 6V, 10V | 14mOhm @ 10A, 10V | Surface Mount | 3V @ 1mA | 18 nC @ 10 V | 40 V | ±20V | 820 pF @ 10 V | - | - | DPAK+ | - | 38W (Tc) | 175°C (TJ) |
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TK20S06K3L(T6L1,NQMOSFET N-CH 60V 20A DPAK Toshiba Semiconductor and Storage |
6,402 | - |
|
数据表 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Ta) | 6V, 10V | 29mOhm @ 10A, 10V | Surface Mount | 3V @ 1mA | 18 nC @ 10 V | 60 V | ±20V | 780 pF @ 10 V | - | - | DPAK+ | - | 38W (Tc) | 175°C (TJ) |
|
TK25E06K3,S1X(SMOSFET N-CH 60V 25A TO220-3 Toshiba Semiconductor and Storage |
7,605 | - |
|
数据表 |
U-MOSIV | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Ta) | - | 18mOhm @ 12.5A, 10V | Through Hole | - | 29 nC @ 10 V | 60 V | - | - | - | - | TO-220-3 | - | 60W (Tc) | 150°C (TJ) |
|
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TK2P60D(TE16L1,NQ)MOSFET N-CH 600V 2A PW-MOLD Toshiba Semiconductor and Storage |
8,820 | - |
|
数据表 |
π-MOSVII | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | Surface Mount | 4.4V @ 1mA | 7 nC @ 10 V | 600 V | ±30V | 280 pF @ 25 V | - | - | PW-MOLD | - | 60W (Tc) | 150°C (TJ) |
|
|
TK30S06K3L(T6L1,NQMOSFET N-CH 60V 30A DPAK Toshiba Semiconductor and Storage |
3,283 | - |
|
数据表 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 6V, 10V | 18Ohm @ 15A, 10V | Surface Mount | 3V @ 1mA | 28 nC @ 10 V | 60 V | ±20V | 1350 pF @ 10 V | AEC-Q101 | - | DPAK+ | Automotive | 58W (Tc) | 175°C (TJ) |
|
TPH2R903PL,L1QPB-FPOWERMOSFETTRANSISTORSOP8-AD Toshiba Semiconductor and Storage |
7,519 | - |
|
数据表 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 2.9mOhm @ 35A, 10V | Surface Mount | 2.1V @ 200µA | 26 nC @ 10 V | 30 V | ±20V | 2300 pF @ 15 V | - | - | 8-SOP Advance (5x5) | - | 960mW (Ta), 81W (Tc) | 175°C |
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TK40E10K3,S1X(SMOSFET N-CH 100V 40A TO220-3 Toshiba Semiconductor and Storage |
3,959 | - |
|
数据表 |
U-MOSIV | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Ta) | - | 15mOhm @ 20A, 10V | Through Hole | 4V @ 1mA | 84 nC @ 10 V | 100 V | - | 4000 pF @ 10 V | - | - | TO-220-3 | - | - | - |
|
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TK40P03M1(T6RDS-Q)MOSFET N-CH 30V 40A DPAK Toshiba Semiconductor and Storage |
7,945 | - |
|
数据表 |
U-MOSVI-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | Surface Mount | 2.3V @ 100µA | 17.5 nC @ 10 V | 30 V | ±20V | 1150 pF @ 10 V | - | - | DPAK | - | - | - |
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TK40S10K3Z(T6L1,NQMOSFET N-CH 100V 40A DPAK Toshiba Semiconductor and Storage |
9,847 | - |
|
数据表 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Ta) | 10V | 18mOhm @ 20A, 10V | Surface Mount | 4V @ 1mA | 61 nC @ 10 V | 100 V | ±20V | 3110 pF @ 10 V | - | - | DPAK+ | - | 93W (Tc) | 175°C (TJ) |
