Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 59

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK5R3E08QM,S1X UMOS10 TO-220AB 80V 5.3MOHM Toshiba Semiconductor and Storage	6	-	询价单	数据表	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	6V, 10V	5.3mOhm @ 50A, 10V	Through Hole	3.5V @ 700µA	55 nC @ 10 V	80 V	±20V	3980 pF @ 40 V	-	-	TO-220	-	150W (Tc)	175°C
TK3R3A06PL,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	6,374	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	3.3mOhm @ 40A, 10V	Through Hole	2.5V @ 700µA	71 nC @ 10 V	60 V	±20V	5000 pF @ 30 V	-	-	TO-220SIS	-	42W (Tc)	175°C
TK6A65D(STA4,Q,M) MOSFET N-CH 650V 6A TO220SIS Toshiba Semiconductor and Storage	20	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	10V	1.11Ohm @ 3A, 10V	Through Hole	4V @ 1mA	20 nC @ 10 V	650 V	±30V	1050 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK290A65Y,S4X MOSFET N-CH 650V 11.5A TO220SIS Toshiba Semiconductor and Storage	3,566	-	询价单	数据表	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Tc)	10V	290mOhm @ 5.8A, 10V	Through Hole	4V @ 450µA	25 nC @ 10 V	650 V	±30V	730 pF @ 300 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK9A90E,S4X MOSFET N-CH 900V 9A TO220SIS Toshiba Semiconductor and Storage	24	-	询价单	数据表	π-MOSVIII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	10V	1.3Ohm @ 4.5A, 10V	Through Hole	4V @ 900µA	46 nC @ 10 V	900 V	±30V	2000 pF @ 25 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK3R9E10PL,S1X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	5,271	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	3.9mOhm @ 50A, 10V	Through Hole	2.5V @ 1mA	96 nC @ 10 V	100 V	±20V	6320 pF @ 50 V	-	-	TO-220	-	230W (Tc)	175°C
TK10A80E,S4X MOSFET N-CH 800V 10A TO220SIS Toshiba Semiconductor and Storage	9,697	-	询价单	数据表	π-MOSVIII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	10V	1Ohm @ 5A, 10V	Through Hole	4V @ 1mA	46 nC @ 10 V	800 V	±30V	2000 pF @ 25 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK7J90E,S1E MOSFET N-CH 900V 7A TO3P Toshiba Semiconductor and Storage	22	-	询价单	数据表	π-MOSVIII	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	2Ohm @ 3.5A, 10V	Through Hole	4V @ 700µA	32 nC @ 10 V	900 V	±30V	1350 pF @ 25 V	-	-	TO-3P(N)	-	200W (Tc)	150°C (TJ)
TK100A06N1,S4X MOSFET N-CH 60V 100A TO220SIS Toshiba Semiconductor and Storage	6,673	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	2.7mOhm @ 50A, 10V	Through Hole	4V @ 1mA	140 nC @ 10 V	60 V	±20V	10500 pF @ 30 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK72A12N1,S4X MOSFET N-CH 120V 72A TO220SIS Toshiba Semiconductor and Storage	5,341	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	72A (Tc)	10V	4.5mOhm @ 36A, 10V	Through Hole	4V @ 1mA	130 nC @ 10 V	120 V	±20V	8100 pF @ 60 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)

共 814 条记录«上一页 1... 55 56 57 585960 61 62...82 下一页»