Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 58

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK16A60W5,S4VX MOSFET N-CH 600V 15.8A TO220SIS Toshiba Semiconductor and Storage	11	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Through Hole	3.7V @ 1.5mA	43 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK4K1A60F,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	7	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	10V	4.1Ohm @ 1A, 10V	Through Hole	4V @ 190µA	8 nC @ 10 V	600 V	±30V	270 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C
TK40E06N1,S1X MOSFET N-CH 60V 40A TO220 Toshiba Semiconductor and Storage	23	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	10V	10.4mOhm @ 20A, 10V	Through Hole	4V @ 300µA	23 nC @ 10 V	60 V	±20V	1700 pF @ 30 V	-	-	TO-220	-	67W (Tc)	150°C (TJ)
TK1K2A60F,S4X MOSFET N-CH 600V 6A TO220SIS Toshiba Semiconductor and Storage	6,491	-	询价单	数据表	U-MOSIX	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	10V	1.2Ohm @ 3A, 10V	Through Hole	4V @ 630µA	21 nC @ 10 V	600 V	±30V	740 pF @ 300 V	-	-	TO-220SIS	-	35W (Tc)	150°C
TK6R8A08QM,S4X UMOS10 TO-220SIS 80V 6.8MOHM Toshiba Semiconductor and Storage	19	-	询价单	数据表	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	6V, 10V	6.8mOhm @ 29A, 10V	Through Hole	3.5V @ 500µA	39 nC @ 10 V	80 V	±20V	2700 pF @ 40 V	-	-	TO-220SIS	-	41W (Tc)	175°C
TK110E10PL,S1X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	5,429	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	4.5V, 10V	10.7mOhm @ 21A, 10V	Through Hole	2.5V @ 300µA	33 nC @ 10 V	100 V	±20V	2040 pF @ 50 V	-	-	TO-220	-	87W (Tc)	175°C
TK22A10N1,S4X MOSFET N-CH 100V 22A TO220SIS Toshiba Semiconductor and Storage	1	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	13.8mOhm @ 11A, 10V	Through Hole	4V @ 300µA	28 nC @ 10 V	100 V	±20V	1800 pF @ 50 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK42A12N1,S4X MOSFET N-CH 120V 42A TO220SIS Toshiba Semiconductor and Storage	9,325	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	9.4mOhm @ 21A, 10V	Through Hole	4V @ 1mA	52 nC @ 10 V	120 V	±20V	3100 pF @ 60 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK11A65W,S5X MOSFET N-CH 650V 11.1A TO220SIS Toshiba Semiconductor and Storage	6	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.1A (Ta)	10V	390mOhm @ 5.5A, 10V	Through Hole	3.5V @ 450µA	25 nC @ 10 V	650 V	±30V	890 pF @ 300 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK32E12N1,S1X MOSFET N CH 120V 60A TO-220 Toshiba Semiconductor and Storage	5,659	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	13.8mOhm @ 16A, 10V	Through Hole	4V @ 500µA	34 nC @ 10 V	120 V	±20V	2000 pF @ 60 V	-	-	TO-220	-	98W (Tc)	150°C (TJ)

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