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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TK10A60D(STA4,Q,M)

TK10A60D(STA4,Q,M)

MOSFET N-CH 600V 10A TO220SIS

Toshiba Semiconductor and Storage

4,140 -
TK10A60D(STA4,Q,M)

数据表

π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 750mOhm @ 5A, 10V Through Hole 4V @ 1mA 25 nC @ 10 V 600 V ±30V 1350 pF @ 25 V - - TO-220SIS - 45W (Tc) 150°C (TJ)
TK13A60D(STA4,Q,M)

TK13A60D(STA4,Q,M)

MOSFET N-CH 600V 13A TO220SIS

Toshiba Semiconductor and Storage

6,464 -
TK13A60D(STA4,Q,M)

数据表

π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 10V 430mOhm @ 6.5A, 10V Through Hole 4V @ 1mA 40 nC @ 10 V 600 V ±30V 2300 pF @ 25 V - - TO-220SIS - 50W (Tc) 150°C (TJ)
TK6A60D(STA4,Q,M)

TK6A60D(STA4,Q,M)

MOSFET N-CH 600V 6A TO220SIS

Toshiba Semiconductor and Storage

9,901 -
TK6A60D(STA4,Q,M)

数据表

π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 1.25Ohm @ 3A, 10V Through Hole 4V @ 1mA 16 nC @ 10 V 600 V ±30V 800 pF @ 25 V - - TO-220SIS - 40W (Tc) 150°C (TJ)
TPC8042(TE12L,Q,M)

TPC8042(TE12L,Q,M)

MOSFET N-CH 30V 18A 8SOP

Toshiba Semiconductor and Storage

4,114 -
TPC8042(TE12L,Q,M)

数据表

U-MOSIV 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta) 4.5V, 10V 3.4mOhm @ 9A, 10V Surface Mount 2.5V @ 1mA 56 nC @ 10 V 30 V ±20V 2900 pF @ 10 V - - 8-SOP (5.5x6.0) - 1W (Ta) 150°C (TJ)
TPC8048-H(TE12L,Q)

TPC8048-H(TE12L,Q)

MOSFET N-CH 60V 16A 8SOP

Toshiba Semiconductor and Storage

4,865 -
TPC8048-H(TE12L,Q)

数据表

U-MOSVI-H 8-SOIC (0.173", 4.40mm Width) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 6.9mOhm @ 8A, 10V Surface Mount 2.3V @ 1mA 87 nC @ 10 V 60 V ±20V 7540 pF @ 10 V - - 8-SOP (5.5x6.0) - 1W (Ta) 150°C (TJ)
TPH9R00CQ5,LQ

TPH9R00CQ5,LQ

150V U-MOS X-H SOP-ADVANCE(N) 9M

Toshiba Semiconductor and Storage

10 -
TPH9R00CQ5,LQ

数据表

U-MOSX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 64A (Tc) 8V, 10V 9mOhm @ 32A, 10V Surface Mount 4.5V @ 1mA 44 nC @ 10 V 150 V ±20V 5400 pF @ 75 V - - 8-SOP Advance (5x5) - 210W (Tc) 175°C
TK055U60Z1,RQ

TK055U60Z1,RQ

600V DTMOS VI TOLL 55MOHM

Toshiba Semiconductor and Storage

5,820 -
TK055U60Z1,RQ

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Ta) 10V 55mOhm @ 15A, 10V Surface Mount 4V @ 1.69mA 65 nC @ 10 V 600 V ±30V 3680 pF @ 300 V - - TOLL - 270W (Tc) 150°C
SSM3K335R,LF

SSM3K335R,LF

MOSFET N CH 30V 6A SOT-23F

Toshiba Semiconductor and Storage

2,904 -
SSM3K335R,LF

数据表

U-MOSVII-H SOT-23-3 Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 38mOhm @ 4A, 10V Surface Mount 2.5V @ 100µA 2.7 nC @ 4.5 V 30 V ±20V 340 pF @ 15 V - - SOT-23F - 1W (Ta) 150°C (TJ)
TK110A10PL,S4X

TK110A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

9,736 -
TK110A10PL,S4X

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 4.5V, 10V 10.8mOhm @ 18A, 10V Through Hole 2.5V @ 300µA 33 nC @ 10 V 100 V ±20V 2040 pF @ 50 V - - TO-220SIS - 36W (Tc) 175°C
TPH1R405PL,L1Q

TPH1R405PL,L1Q

MOSFET N-CH 45V 120A 8SOP

Toshiba Semiconductor and Storage

6,452 -
TPH1R405PL,L1Q

数据表

U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V Surface Mount 2.4V @ 500µA 74 nC @ 10 V 45 V ±20V 6300 pF @ 22.5 V - - 8-SOP Advance (5x5) - 960mW (Ta), 132W (Tc) 175°C
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