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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SK4016(Q)

2SK4016(Q)

MOSFET N-CH 600V 13A TO220SIS

Toshiba Semiconductor and Storage

2,536 -
2SK4016(Q)

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 10V 500mOhm @ 6.5A, 10V Through Hole 4V @ 1mA 62 nC @ 10 V 600 V ±30V 3100 pF @ 25 V - - TO-220SIS - 50W (Tc) 150°C (TJ)
TPH1R712MD,L1Q

TPH1R712MD,L1Q

MOSFET P-CH 20V 60A 8SOP

Toshiba Semiconductor and Storage

3,557 -
TPH1R712MD,L1Q

数据表

U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60A (Tc) 2.5V, 4.5V 1.7mOhm @ 30A, 4.5V Surface Mount 1.2V @ 1mA 182 nC @ 5 V 20 V ±12V 10900 pF @ 10 V - - 8-SOP Advance (5x5) - 78W (Tc) 150°C (TJ)
2SK4017(Q)

2SK4017(Q)

MOSFET N-CH 60V 5A PW-MOLD2

Toshiba Semiconductor and Storage

7,745 -
2SK4017(Q)

数据表

U-MOSIII TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 4V, 10V 100mOhm @ 2.5A, 10V Through Hole 2.5V @ 1mA 15 nC @ 10 V 60 V ±20V 730 pF @ 10 V - - PW-MOLD2 - 20W (Tc) 150°C (TJ)
2SK4021(Q)

2SK4021(Q)

MOSFET N-CH 250V 4.5A PW-MOLD2

Toshiba Semiconductor and Storage

5,117 -
2SK4021(Q)

数据表

- TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 10V 1Ohm @ 2.5A, 10V Through Hole 3.5V @ 1mA 10 nC @ 10 V 250 V ±20V 440 pF @ 10 V - - PW-MOLD2 - 20W (Tc) 150°C (TJ)
TPC8026(TE12L,Q,M)

TPC8026(TE12L,Q,M)

MOSFET N-CH 30V 13A 8SOP

Toshiba Semiconductor and Storage

8,352 -
TPC8026(TE12L,Q,M)

数据表

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 6.6mOhm @ 6.5A, 10V Surface Mount 2.5V @ 1mA 42 nC @ 10 V 30 V ±20V 1800 pF @ 10 V - - 8-SOP (5.5x6.0) - 1W (Ta) 150°C (TJ)
TPC8036-H(TE12L,QM

TPC8036-H(TE12L,QM

MOSFET N-CH 30V 18A 8SOP

Toshiba Semiconductor and Storage

8,406 -
TPC8036-H(TE12L,QM

数据表

U-MOSVI-H 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta) 4.5V, 10V 4.5mOhm @ 9A, 10V Surface Mount 2.3V @ 1mA 49 nC @ 10 V 30 V ±20V 4600 pF @ 10 V - - 8-SOP (5.5x6.0) - 1W (Ta) 150°C (TJ)
TPCA8036-H(TE12L,Q

TPCA8036-H(TE12L,Q

MOSFET N-CH 30V 38A 8SOP

Toshiba Semiconductor and Storage

6,978 -
TPCA8036-H(TE12L,Q

数据表

U-MOSVI-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 38A (Ta) 4.5V, 10V 4.2mOhm @ 19A, 10V Surface Mount 2.3V @ 500µA 50 nC @ 10 V 30 V ±20V 4600 pF @ 10 V - - 8-SOP Advance (5x5) - 1.6W (Ta), 45W (Tc) 150°C (TJ)
TPCA8A02-H(TE12LQM

TPCA8A02-H(TE12LQM

MOSFET N-CH 30V 34A 8SOP

Toshiba Semiconductor and Storage

7,670 -
TPCA8A02-H(TE12LQM

数据表

U-MOSV-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 34A (Ta) 4.5V, 10V 5.3mOhm @ 17A, 10V Surface Mount 2.3V @ 1mA 36 nC @ 10 V 30 V ±20V 3430 pF @ 10 V - - 8-SOP Advance (5x5) - 1.6W (Ta), 45W (Tc) 150°C (TJ)
TPCA8A04-H(TE12L,Q

TPCA8A04-H(TE12L,Q

MOSFET N-CH 30V 44A 8SOP

Toshiba Semiconductor and Storage

7,418 -
TPCA8A04-H(TE12L,Q

数据表

U-MOSV-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 44A (Ta) 4.5V, 10V 3.2mOhm @ 22A, 10V Surface Mount 2.3V @ 1mA 59 nC @ 10 V 30 V ±20V 5700 pF @ 10 V - - 8-SOP Advance (5x5) - - 150°C (TJ)
TPCP8003-H(TE85L,F

TPCP8003-H(TE85L,F

MOSFET N-CH 100V 2.2A PS-8

Toshiba Semiconductor and Storage

4,078 -
TPCP8003-H(TE85L,F

数据表

U-MOSIII-H 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.2A (Ta) 4.5V, 10V 180mOhm @ 1.1A, 10V Surface Mount 2.3V @ 1mA 7.5 nC @ 10 V 100 V ±20V 360 pF @ 10 V - - PS-8 (2.9x2.4) - 840mW (Ta) 150°C (TJ)
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