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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SK2744(F)

2SK2744(F)

MOSFET N-CH 50V 45A TO3P

Toshiba Semiconductor and Storage

3,246 -
2SK2744(F)

数据表

- TO-3P-3, SC-65-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 45A (Ta) 10V 20mOhm @ 25A, 10V Through Hole 3.5V @ 1mA 68 nC @ 10 V 50 V ±20V 2300 pF @ 10 V - - TO-3P(N) - 125W (Tc) 150°C (TJ)
2SK2866(F)

2SK2866(F)

MOSFET N-CH 600V 10A TO220AB

Toshiba Semiconductor and Storage

6,064 -
2SK2866(F)

数据表

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 750mOhm @ 5A, 10V Through Hole 4V @ 1mA 45 nC @ 10 V 600 V ±30V 2040 pF @ 10 V - - TO-220AB - 125W (Tc) 150°C (TJ)
2SK3342(TE16L1,NQ)

2SK3342(TE16L1,NQ)

MOSFET N-CH 250V 4.5A PW-MOLD

Toshiba Semiconductor and Storage

2,582 -
2SK3342(TE16L1,NQ)

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 10V 1Ohm @ 2.5A, 10V Surface Mount 3.5V @ 1mA 10 nC @ 10 V 250 V ±20V 440 pF @ 10 V - - PW-MOLD - 20W (Tc) 150°C (TJ)
2SK3388(TE24L,Q)

2SK3388(TE24L,Q)

MOSFET N-CH 250V 20A 4TFP

Toshiba Semiconductor and Storage

8,718 -
2SK3388(TE24L,Q)

数据表

- SC-97 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 105mOhm @ 10A, 10V Surface Mount 3.5V @ 1mA 100 nC @ 10 V 250 V ±20V 4000 pF @ 10 V - - 4-TFP (9.2x9.2) - 125W (Tc) 150°C (TJ)
2SK3462(TE16L1,NQ)

2SK3462(TE16L1,NQ)

MOSFET N-CH 250V 3A PW-MOLD

Toshiba Semiconductor and Storage

9,848 -
2SK3462(TE16L1,NQ)

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 1.7Ohm @ 1.5A, 10V Surface Mount 3.5V @ 1mA 12 nC @ 10 V 250 V ±20V 267 pF @ 10 V - - PW-MOLD - 20W (Tc) 150°C (TJ)
SSM3J327R,LF

SSM3J327R,LF

MOSFET P-CH 20V 3.9A SOT23F

Toshiba Semiconductor and Storage

6,138 -
SSM3J327R,LF

数据表

U-MOSVI SOT-23-3 Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.9A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V Surface Mount 1V @ 1mA 4.6 nC @ 4.5 V 20 V ±8V 290 pF @ 10 V - - SOT-23F - 1W (Ta) 150°C (TJ)
2SK3466(TE24L,Q)

2SK3466(TE24L,Q)

MOSFET N-CH 500V 5A 4TFP

Toshiba Semiconductor and Storage

5,083 -
2SK3466(TE24L,Q)

数据表

- SC-97 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.5Ohm @ 5A, 10V Surface Mount 4V @ 1mA 17 nC @ 10 V 500 V ±30V 780 pF @ 10 V - - 4-TFP (9.2x9.2) - 50W (Tc) 150°C (TJ)
2SK3844(Q)

2SK3844(Q)

MOSFET N-CH 60V 45A TO220NIS

Toshiba Semiconductor and Storage

9,874 -
2SK3844(Q)

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 45A (Ta) 10V 5.8mOhm @ 23A, 10V Through Hole 4V @ 1mA 196 nC @ 10 V 60 V ±20V 12400 pF @ 10 V - - TO-220NIS - 45W (Tc) 150°C (TJ)
2SK3868(Q,M)

2SK3868(Q,M)

MOSFET N-CH 500V 5A TO220SIS

Toshiba Semiconductor and Storage

8,120 -
2SK3868(Q,M)

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.7Ohm @ 2.5A, 10V Through Hole 4V @ 1mA 16 nC @ 10 V 500 V ±30V 550 pF @ 25 V - - TO-220SIS - 35W (Tc) 150°C (TJ)
2SK3906(Q)

2SK3906(Q)

MOSFET N-CH 600V 20A TO3P

Toshiba Semiconductor and Storage

8,979 -
2SK3906(Q)

数据表

- TO-3P-3, SC-65-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 330mOhm @ 10A, 10V Through Hole 4V @ 1mA 60 nC @ 10 V 600 V ±30V 4250 pF @ 25 V - - TO-3P(N) - 150W (Tc) 150°C (TJ)
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