Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 54

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPCA8A01-H(TE12L,Q MOSFET N-CH 30V 36A 8SOP Toshiba Semiconductor and Storage	8,060	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	36A (Ta)	4.5V, 10V	5.6mOhm @ 18A, 10V	Surface Mount	2.3V @ 1mA	35 nC @ 10 V	30 V	±20V	1970 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C (TJ)
TPCF8102(TE85L,F,M MOSFET P-CH 20V 6A VS-8 Toshiba Semiconductor and Storage	4,828	-	询价单	数据表	U-MOSIII	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	6A (Ta)	1.8V, 4.5V	30mOhm @ 3A, 4.5V	Surface Mount	1.2V @ 200µA	19 nC @ 5 V	20 V	±8V	1550 pF @ 10 V	-	-	VS-8 (2.9x1.5)	-	700mW (Ta)	150°C (TJ)
TPCP8001-H(TE85LFM MOSFET N-CH 30V 7.2A PS-8 Toshiba Semiconductor and Storage	5,962	-	询价单	数据表	U-MOSIII	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.2A (Ta)	4.5V, 10V	16mOhm @ 3.6A, 10V	Surface Mount	2.3V @ 1mA	11 nC @ 10 V	30 V	±20V	640 pF @ 10 V	-	-	PS-8 (2.9x2.4)	-	1W (Ta), 30W (Tc)	150°C (TJ)
TK2R4A08QM,S4X UMOS10 TO-220SIS 80V 2.4MOHM Toshiba Semiconductor and Storage	78	-	询价单	数据表	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	2.44mOhm @ 50A, 10V	Through Hole	3.5V @ 2.2mA	179 nC @ 10 V	80 V	±20V	13000 pF @ 40 V	-	-	TO-220SIS	-	47W (Tc)	175°C
2SK3128(Q) MOSFET N-CH 30V 60A TO3P Toshiba Semiconductor and Storage	3,924	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60A (Ta)	10V	12mOhm @ 30A, 10V	Through Hole	3V @ 1mA	66 nC @ 10 V	30 V	±20V	2300 pF @ 10 V	-	-	TO-3P(N)	-	150W (Tc)	150°C (TJ)
2SJ304(F) MOSFET P-CH 60V 14A TO220NIS Toshiba Semiconductor and Storage	6,390	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	14A (Ta)	4V, 10V	120mOhm @ 7A, 10V	Through Hole	2V @ 1mA	45 nC @ 10 V	60 V	±20V	1200 pF @ 10 V	-	-	TO-220NIS	-	40W (Tc)	150°C (TJ)
2SJ610(TE16L1,NQ) MOSFET P-CH 250V 2A PW-MOLD Toshiba Semiconductor and Storage	6,685	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2A (Ta)	10V	2.55Ohm @ 1A, 10V	Surface Mount	3.5V @ 1mA	24 nC @ 10 V	250 V	±20V	381 pF @ 10 V	-	-	PW-MOLD	-	20W (Ta)	150°C (TJ)
2SJ681(Q) MOSFET P-CH 60V 5A PW-MOLD2 Toshiba Semiconductor and Storage	4,257	-	询价单	数据表	-	TO-251-3 Stub Leads, IPAK	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	5A (Ta)	4V, 10V	170mOhm @ 2.5A, 10V	Through Hole	2V @ 1mA	15 nC @ 10 V	60 V	±20V	700 pF @ 10 V	-	-	PW-MOLD2	-	20W (Ta)	150°C (TJ)
2SK2507(F) MOSFET N-CH 50V 25A TO220NIS Toshiba Semiconductor and Storage	7,232	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	4V, 10V	46mOhm @ 12A, 10V	Through Hole	2V @ 1mA	25 nC @ 10 V	50 V	±20V	900 pF @ 10 V	-	-	TO-220NIS	-	30W (Tc)	150°C (TJ)
2SK2544(F) MOSFET N-CH 600V 6A TO220AB Toshiba Semiconductor and Storage	5,388	-	询价单	数据表	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	10V	1.25Ohm @ 3A, 10V	Through Hole	4V @ 1mA	30 nC @ 10 V	600 V	±30V	1300 pF @ 10 V	-	-	TO-220AB	-	80W (Tc)	150°C (TJ)

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