Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 49

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
2SK2995(F) MOSFET N-CH 250V 30A TO3PIS Toshiba Semiconductor and Storage	5,899	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	10V	68mOhm @ 15A, 10V	Through Hole	3.5V @ 1mA	132 nC @ 10 V	250 V	±20V	5400 pF @ 10 V	-	-	TO-3P(N)IS	-	90W (Tc)	150°C (TJ)
2SK3068(TE24L,Q) MOSFET N-CH 500V 12A TO220SM Toshiba Semiconductor and Storage	7,947	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	520mOhm @ 6A, 10V	Surface Mount	4V @ 1mA	45 nC @ 10 V	500 V	±30V	2040 pF @ 10 V	-	-	TO-220SM	-	100W (Tc)	150°C (TJ)
2SK3127(TE24L,Q) MOSFET N-CH 30V 45A TO220SM Toshiba Semiconductor and Storage	4,038	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Ta)	10V	12mOhm @ 25A, 10V	Surface Mount	3V @ 1mA	66 nC @ 10 V	30 V	±20V	2300 pF @ 10 V	-	-	TO-220SM	-	65W (Tc)	150°C (TJ)
2SK3132(Q) MOSFET N-CH 500V 50A TO3P Toshiba Semiconductor and Storage	2,348	-	询价单	数据表	-	TO-3PL	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	95mOhm @ 25A, 10V	Through Hole	3.4V @ 1mA	280 nC @ 10 V	500 V	±30V	11000 pF @ 10 V	-	-	TO-3P(L)	-	250W (Tc)	150°C (TJ)
2SK3565(Q,M) MOSFET N-CH 900V 5A TO220SIS Toshiba Semiconductor and Storage	4,634	-	询价单	数据表	π-MOSIV	TO-220-3 Full Pack	Bulk	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	2.5Ohm @ 3A, 10V	Through Hole	4V @ 1mA	28 nC @ 10 V	900 V	±30V	1150 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TW015Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 15 Toshiba Semiconductor and Storage	98	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	100A (Tc)	18V	22mOhm @ 50A, 18V	Through Hole	5V @ 11.7mA	128 nC @ 18 V	650 V	+25V, -10V	4850 pF @ 400 V	-	-	TO-247-4L(X)	-	342W (Tc)	175°C
SSM3J118TU(TE85L) MOSFET P-CH 30V 1.4A UFM Toshiba Semiconductor and Storage	44	-	询价单	数据表	U-MOSII	3-SMD, Flat Leads	Tape & Reel (TR)	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	1.4A (Ta)	4V, 10V	240mOhm @ 650mA, 10V	Surface Mount	-	-	30 V	±20V	137 pF @ 15 V	-	-	UFM	-	500mW (Ta)	150°C (TJ)
SSM3J46CTB(TPL3) MOSFET P-CH 20V 2A CST3B Toshiba Semiconductor and Storage	29	-	询价单	数据表	U-MOSVI	3-SMD, No Lead	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2A (Ta)	1.5V, 4.5V	103mOhm @ 1.5A, 4.5V	Surface Mount	1V @ 1mA	4.7 nC @ 4.5 V	20 V	±8V	290 pF @ 10 V	-	-	CST3B	-	-	150°C (TJ)
TK15A60U(STA4,Q,M) MOSFET N-CH 600V 15A TO220SIS Toshiba Semiconductor and Storage	5,141	-	询价单	数据表	DTMOSII	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	10V	300mOhm @ 7.5A, 10V	Through Hole	5V @ 1mA	17 nC @ 10 V	600 V	±30V	950 pF @ 10 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK20A60U(Q,M) MOSFET N-CH 600V 20A TO220SIS Toshiba Semiconductor and Storage	8,246	-	询价单	数据表	DTMOSII	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	190mOhm @ 10A, 10V	Through Hole	5V @ 1mA	27 nC @ 10 V	600 V	±30V	1470 pF @ 10 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)

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