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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPC8032-H(TE12LQM)MOSFET N-CH 30V 15A 8SOP Toshiba Semiconductor and Storage |
4,024 | - |
|
数据表 |
- | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15A (Ta) | - | 6.5mOhm @ 7.5A, 10V | Surface Mount | 2.5V @ 1mA | 33 nC @ 10 V | 30 V | - | 2846 pF @ 10 V | - | - | 8-SOP (5.5x6.0) | - | - | 150°C (TJ) |
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TPC8035-H(TE12L,QMMOSFET N-CH 30V 18A 8SOP Toshiba Semiconductor and Storage |
2,216 | - |
|
数据表 |
U-MOSVI-H | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Ta) | 4.5V, 10V | 3.2mOhm @ 9A, 10V | Surface Mount | 2.3V @ 1mA | 82 nC @ 10 V | 30 V | ±20V | 7800 pF @ 10 V | - | - | 8-SOP (5.5x6.0) | - | 1W (Ta) | 150°C (TJ) |
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TPC8038-H(TE12L,Q)MOSFET N-CH 30V 12A 8SOP Toshiba Semiconductor and Storage |
5,008 | - |
|
数据表 |
U-MOSV-H | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | - | 11.4mOhm @ 6A, 10V | Surface Mount | 2.5V @ 1mA | 21 nC @ 10 V | 30 V | - | 2150 pF @ 10 V | - | - | 8-SOP (5.5x6.0) | - | - | 150°C (TJ) |
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TPC8110(TE12L,Q,M)MOSFET P-CH 40V 8A 8SOP Toshiba Semiconductor and Storage |
8,395 | - |
|
数据表 |
U-MOSIII | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8A (Ta) | 4V, 10V | 25mOhm @ 4A, 10V | Surface Mount | 2V @ 1mA | 48 nC @ 10 V | 40 V | ±20V | 2180 pF @ 10 V | - | - | 8-SOP (5.5x6.0) | - | 1W (Ta) | 150°C (TJ) |
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TPC8111(TE12L,Q,M)MOSFET P-CH 30V 11A 8SOP Toshiba Semiconductor and Storage |
8,949 | - |
|
数据表 |
- | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 4V, 10V | 12mOhm @ 5.5A, 10V | Surface Mount | 2V @ 1mA | 107 nC @ 10 V | 30 V | ±20V | 5710 pF @ 10 V | - | - | 8-SOP (5.5x6.0) | - | 1W (Ta) | 150°C (TJ) |
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TPC8113(TE12L,Q)MOSFET P-CH 30V 11A 8SOP Toshiba Semiconductor and Storage |
9,561 | - |
|
数据表 |
- | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 4V, 10V | 10mOhm @ 5.5A, 10V | Surface Mount | 2V @ 1mA | 107 nC @ 10 V | 30 V | ±20V | 4500 pF @ 10 V | - | - | 8-SOP (5.5x6.0) | - | 1W (Ta) | 150°C (TJ) |
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TPC8A02-H(TE12L,Q)MOSFET N-CH 30V 16A 8SOP Toshiba Semiconductor and Storage |
2,959 | - |
|
数据表 |
- | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Ta) | 4.5V, 10V | 5.6mOhm @ 8A, 10V | Surface Mount | 2.3V @ 1mA | 34 nC @ 10 V | 30 V | ±20V | 1970 pF @ 10 V | - | - | 8-SOP (5.5x6.0) | - | 1W (Ta) | 150°C (TJ) |
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TPCA8003-H(TE12LQMMOSFET N-CH 30V 35A 8SOP Toshiba Semiconductor and Storage |
8,114 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Ta) | 4.5V, 10V | 6.6mOhm @ 18A, 10V | Surface Mount | 2.3V @ 1mA | 25 nC @ 10 V | 30 V | ±20V | 1465 pF @ 10 V | - | - | 8-SOP Advance (5x5) | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) |
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TPCA8005-H(TE12LQMMOSFET N-CH 30V 27A 8SOP Toshiba Semiconductor and Storage |
5,693 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 27A (Ta) | 4.5V, 10V | 9mOhm @ 14A, 10V | Surface Mount | 2.3V @ 1mA | 24 nC @ 10 V | 30 V | ±20V | 1395 pF @ 10 V | - | - | 8-SOP Advance (5x5) | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) |
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TPCA8008-H(TE12LQMMOSFET N-CH 250V 4A 8SOP Toshiba Semiconductor and Storage |
2,124 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 580mOhm @ 2A, 10V | Surface Mount | 4V @ 1mA | 10 nC @ 10 V | 250 V | ±20V | 600 pF @ 10 V | - | - | 8-SOP Advance (5x5) | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) |
