Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 50

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPC6109-H(TE85L,FM MOSFET P-CH 30V 5A VS-6 Toshiba Semiconductor and Storage	7,807	-	询价单	数据表	U-MOSIII-H	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5A (Ta)	4.5V, 10V	59mOhm @ 2.5A, 10V	Surface Mount	1.2V @ 200µA	12.3 nC @ 10 V	30 V	±20V	490 pF @ 10 V	-	-	VS-6 (2.9x2.8)	-	700mW (Ta)	150°C (TJ)
2SK2266(TE24R,Q) MOSFET N-CH 60V 45A TO220SM Toshiba Semiconductor and Storage	9,841	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Ta)	4V, 10V	30mOhm @ 25A, 10V	Surface Mount	2V @ 1mA	60 nC @ 10 V	60 V	±20V	1800 pF @ 10 V	-	-	TO-220SM	-	65W (Tc)	150°C (TJ)
2SK2376(Q) MOSFET N-CH 60V 45A TO220FL Toshiba Semiconductor and Storage	4,802	-	询价单	数据表	-	TO-220-3, Short Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Ta)	4V, 10V	17mOhm @ 25A, 10V	Through Hole	2V @ 1mA	110 nC @ 10 V	60 V	±20V	3350 pF @ 10 V	-	-	TO-220FL	-	100W (Tc)	150°C (TJ)
2SK3309(Q) MOSFET N-CH 450V 10A TO220FL Toshiba Semiconductor and Storage	8,487	-	询价单	数据表	-	TO-220-3, Short Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	10V	650mOhm @ 5A, 10V	Through Hole	5V @ 1mA	23 nC @ 10 V	450 V	±30V	920 pF @ 10 V	-	-	TO-220FL	-	65W (Tc)	150°C (TJ)
2SK3309(TE24L,Q) MOSFET N-CH 450V 10A TO220SM Toshiba Semiconductor and Storage	2,032	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	10V	650mOhm @ 5A, 10V	Surface Mount	5V @ 1mA	23 nC @ 10 V	450 V	±30V	920 pF @ 10 V	-	-	TO-220SM	-	65W (Tc)	150°C (TJ)
TK12A60U(Q,M) MOSFET N-CH 600V 12A TO220SIS Toshiba Semiconductor and Storage	6,700	-	询价单	数据表	DTMOSII	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	400mOhm @ 6A, 10V	Through Hole	5V @ 1mA	14 nC @ 10 V	600 V	±30V	720 pF @ 10 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK12J60U(F) MOSFET N-CH 600V 12A TO3P Toshiba Semiconductor and Storage	9,402	-	询价单	数据表	DTMOSII	TO-3P-3, SC-65-3	Tray	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	400mOhm @ 6A, 10V	Through Hole	5V @ 1mA	14 nC @ 10 V	600 V	±30V	720 pF @ 10 V	-	-	TO-3P(N)	-	144W (Tc)	150°C (TJ)
TK15J60U(F) MOSFET N-CH 600V 15A TO3P Toshiba Semiconductor and Storage	8,910	-	询价单	数据表	DTMOSII	TO-3P-3, SC-65-3	Tray	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	10V	300mOhm @ 7.5A, 10V	Through Hole	5V @ 1mA	17 nC @ 10 V	600 V	±30V	950 pF @ 10 V	-	-	TO-3P(N)	-	170W (Tc)	150°C (TJ)
TK20J60U(F) MOSFET N-CH 600V 20A TO3P Toshiba Semiconductor and Storage	6,347	-	询价单	数据表	DTMOSII	TO-3P-3, SC-65-3	Tray	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	190mOhm @ 10A, 10V	Through Hole	5V @ 1mA	27 nC @ 10 V	600 V	±30V	1470 pF @ 10 V	-	-	TO-3P(N)	-	190W (Tc)	150°C (TJ)
TK55D10J1(Q) MOSFET N-CH 100V 55A TO220 Toshiba Semiconductor and Storage	3,005	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55A (Ta)	4.5V, 10V	10.5mOhm @ 27A, 10V	Through Hole	2.3V @ 1mA	110 nC @ 10 V	100 V	±20V	5700 pF @ 10 V	-	-	TO-220(W)	-	140W (Tc)	150°C (TJ)

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