Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 51

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK60D08J1(Q) MOSFET N-CH 75V 60A TO220 Toshiba Semiconductor and Storage	9,983	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60A (Ta)	4.5V, 10V	7.8mOhm @ 30A, 10V	Through Hole	2.3V @ 1mA	86 nC @ 10 V	75 V	±20V	5450 pF @ 10 V	-	-	TO-220(W)	-	140W (Tc)	150°C (TJ)
TK70D06J1(Q) MOSFET N-CH 60V 70A TO220 Toshiba Semiconductor and Storage	6,899	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Ta)	4.5V, 10V	6.4mOhm @ 35A, 10V	Through Hole	2.3V @ 1mA	87 nC @ 10 V	60 V	±20V	5450 pF @ 10 V	-	-	TO-220(W)	-	45W (Tc)	150°C (TJ)
TPC6006-H(TE85L,F) MOSFET N-CH 40V 3.9A VS-6 Toshiba Semiconductor and Storage	2,549	-	询价单	数据表	U-MOSIII-H	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.9A (Ta)	4.5V, 10V	75mOhm @ 1.9A, 10V	Surface Mount	2.3V @ 1mA	4.4 nC @ 10 V	40 V	±20V	251 pF @ 10 V	-	-	VS-6 (2.9x2.8)	-	700mW (Ta)	150°C (TJ)
TPC6104(TE85L,F,M) MOSFET P-CH 20V 5.5A VS-6 Toshiba Semiconductor and Storage	6,047	-	询价单	数据表	U-MOSIII	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5.5A (Ta)	1.8V, 4.5V	40mOhm @ 2.8A, 4.5V	Surface Mount	1.2V @ 200µA	19 nC @ 5 V	20 V	±8V	1430 pF @ 10 V	-	-	VS-6 (2.9x2.8)	-	700mW (Ta)	150°C (TJ)
TPC6107(TE85L,F,M) MOSFET P-CH 20V 4.5A VS-6 Toshiba Semiconductor and Storage	4,588	-	询价单	数据表	U-MOSIV	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.5A (Ta)	2V, 4.5V	55mOhm @ 2.2A, 4.5V	Surface Mount	1.2V @ 200µA	9.8 nC @ 5 V	20 V	±12V	680 pF @ 10 V	-	-	VS-6 (2.9x2.8)	-	700mW (Ta)	150°C (TJ)
TPC8014(TE12L,Q,M) MOSFET N-CH 30V 11A 8SOP Toshiba Semiconductor and Storage	2,801	-	询价单	数据表	-	8-SOIC (0.173", 4.40mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	4.5V, 10V	14mOhm @ 5.5A, 10V	Surface Mount	2.5V @ 1mA	39 nC @ 10 V	30 V	±20V	1860 pF @ 10 V	-	-	8-SOP (5.5x6.0)	-	1W (Ta)	150°C (TJ)
TPC8018-H(TE12LQM) MOSFET N-CH 30V 18A 8SOP Toshiba Semiconductor and Storage	6,240	-	询价单	数据表	-	8-SOIC (0.173", 4.40mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	4.5V, 10V	4.6mOhm @ 9A, 10V	Surface Mount	2.3V @ 1mA	38 nC @ 10 V	30 V	±20V	2265 pF @ 10 V	-	-	8-SOP (5.5x6.0)	-	1W (Ta)	150°C (TJ)
TPC8021-H(TE12LQ,M MOSFET N-CH 30V 11A 8SOP Toshiba Semiconductor and Storage	4,798	-	询价单	数据表	-	8-SOIC (0.173", 4.40mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	4.5V, 10V	17mOhm @ 5.5A, 10V	Surface Mount	2.3V @ 1mA	11 nC @ 10 V	30 V	±20V	640 pF @ 10 V	-	-	8-SOP (5.5x6.0)	-	1W (Ta)	150°C (TJ)
TPC8022-H(TE12LQ,M MOSFET N-CH 40V 7.5A 8SOP Toshiba Semiconductor and Storage	3,273	-	询价单	数据表	-	8-SOIC (0.173", 4.40mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.5A (Ta)	4.5V, 10V	27mOhm @ 3.8A, 10V	Surface Mount	2.3V @ 1mA	11 nC @ 10 V	40 V	±20V	650 pF @ 10 V	-	-	8-SOP (5.5x6.0)	-	1W (Ta)	150°C (TJ)
TPC8031-H(TE12LQM) MOSFET N-CH 30V 11A 8SOP Toshiba Semiconductor and Storage	7,968	-	询价单	数据表	-	8-SOIC (0.173", 4.40mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	-	13.3mOhm @ 5.5A, 10V	Surface Mount	2.5V @ 1mA	21 nC @ 10 V	30 V	-	2150 pF @ 10 V	-	-	8-SOP (5.5x6.0)	-	-	150°C (TJ)

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