Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 46

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK10A80W,S4X MOSFET N-CH 800V 9.5A TO220SIS Toshiba Semiconductor and Storage	49	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.5A (Ta)	10V	550mOhm @ 4.8A, 10V	Through Hole	4V @ 450µA	19 nC @ 10 V	800 V	±20V	1150 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	150°C
TK7E80W,S1X MOSFET N-CH 800V 6.5A TO220 Toshiba Semiconductor and Storage	70	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6.5A (Ta)	10V	950mOhm @ 3.3A, 10V	Through Hole	4V @ 280µA	13 nC @ 10 V	800 V	±20V	700 pF @ 300 V	-	-	TO-220	-	110W (Tc)	150°C
TK14E65W,S1X MOSFET N-CH 650V 13.7A TO220 Toshiba Semiconductor and Storage	48	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13.7A (Ta)	10V	250mOhm @ 6.9A, 10V	Through Hole	3.5V @ 690µA	35 nC @ 10 V	650 V	±30V	1300 pF @ 300 V	-	-	TO-220	-	130W (Tc)	150°C (TJ)
TK20A60W5,S5VX MOSFET N-CH 600V 20A TO220SIS Toshiba Semiconductor and Storage	31	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	175mOhm @ 10A, 10V	Through Hole	4.5V @ 1mA	55 nC @ 10 V	600 V	±30V	1800 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK4R9E15Q5,S1X 150V UMOS10-HSD TO-220 4.9MOHM Toshiba Semiconductor and Storage	89	-	询价单	数据表	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	8V, 10V	4.9mOhm @ 50A, 10V	Through Hole	4.5V @ 2.2mA	96 nC @ 10 V	150 V	±20V	7820 pF @ 75 V	-	-	TO-220	-	300W (Tc)	175°C
TK18A50D(STA4,Q,M) MOSFET N-CH 500V 18A TO220SIS Toshiba Semiconductor and Storage	46	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	10V	270mOhm @ 9A, 10V	Through Hole	4V @ 1mA	45 nC @ 10 V	500 V	±30V	2600 pF @ 25 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK19A45D(STA4,Q,M) MOSFET N-CH 450V 19A TO220SIS Toshiba Semiconductor and Storage	31	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	19A (Ta)	10V	250mOhm @ 9.5A, 10V	Through Hole	4V @ 1mA	45 nC @ 10 V	450 V	±30V	2600 pF @ 25 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK080N60Z1,S1F 600V DTMOS6 TO-247 80MOHM Toshiba Semiconductor and Storage	30	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	10V	80mOhm @ 10.3A, 10V	Through Hole	4V @ 1.17mA	43 nC @ 10 V	600 V	±30V	2510 pF @ 300 V	-	-	TO-247	-	211W (Tc)	150°C
TK12A60W,S4VX MOSFET N-CH 600V 11.5A TO220SIS Toshiba Semiconductor and Storage	79	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	Through Hole	3.7V @ 600µA	25 nC @ 10 V	600 V	±30V	890 pF @ 300 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK28E65W,S1X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	50	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	Through Hole	3.5V @ 1.6mA	75 nC @ 10 V	650 V	±30V	3000 pF @ 300 V	-	-	TO-220	-	230W (Tc)	150°C

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