Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 48

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK62N60W5,S1VF PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	30	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	61.8A (Ta)	10V	45mOhm @ 30.9A, 10V	Through Hole	4.5V @ 3.1mA	205 nC @ 10 V	600 V	±30V	6500 pF @ 300 V	-	-	TO-247	-	400W (Tc)	150°C
TW140Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 14 Toshiba Semiconductor and Storage	65	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	20A (Tc)	18V	191mOhm @ 10A, 18V	Through Hole	5V @ 1mA	24 nC @ 18 V	1200 V	+25V, -10V	691 pF @ 800 V	-	-	TO-247-4L(X)	-	107W (Tc)	175°C
TW083Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 83 Toshiba Semiconductor and Storage	88	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	30A (Tc)	18V	118mOhm @ 15A, 18V	Through Hole	5V @ 600µA	28 nC @ 18 V	650 V	+25V, -10V	873 pF @ 400 V	-	-	TO-247-4L(X)	-	111W (Tc)	175°C
TW027Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 27 Toshiba Semiconductor and Storage	80	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	58A (Tc)	18V	38mOhm @ 29A, 18V	Through Hole	5V @ 3mA	65 nC @ 18 V	650 V	+25V, -10V	2288 pF @ 400 V	-	-	TO-247-4L(X)	-	156W (Tc)	175°C
TW060Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 6 Toshiba Semiconductor and Storage	88	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	36A (Tc)	18V	82mOhm @ 18A, 18V	Through Hole	5V @ 4.2mA	46 nC @ 18 V	1200 V	+25V, -10V	1530 pF @ 800 V	-	-	TO-247-4L(X)	-	170W (Tc)	175°C
2SK2719(F) MOSFET N-CH 900V 3A TO3P Toshiba Semiconductor and Storage	7,557	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	10V	4.3Ohm @ 1.5A, 10V	Through Hole	4V @ 1mA	25 nC @ 10 V	900 V	±30V	750 pF @ 25 V	-	-	TO-3P(N)	-	125W (Tc)	150°C (TJ)
2SK2847(F) MOSFET N-CH 900V 8A TO3PIS Toshiba Semiconductor and Storage	5,627	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	1.4Ohm @ 4A, 10V	Through Hole	4V @ 1mA	58 nC @ 10 V	900 V	±30V	2040 pF @ 25 V	-	-	TO-3P(N)IS	-	85W (Tc)	150°C (TJ)
2SK2917(F) MOSFET N-CH 500V 18A TO3PIS Toshiba Semiconductor and Storage	3,466	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	10V	270mOhm @ 10A, 10V	Through Hole	4V @ 1mA	80 nC @ 10 V	500 V	±30V	3720 pF @ 10 V	-	-	TO-3P(N)IS	-	90W (Tc)	150°C (TJ)
2SK2967(F) MOSFET N-CH 250V 30A TO3P Toshiba Semiconductor and Storage	6,449	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tray	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	10V	68mOhm @ 15A, 10V	Through Hole	3.5V @ 1mA	132 nC @ 10 V	250 V	±20V	5400 pF @ 10 V	-	-	TO-3P(N)	-	150W (Tc)	150°C (TJ)
2SK2993(TE24L,Q) MOSFET N-CH 250V 20A TO220SM Toshiba Semiconductor and Storage	3,849	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	105mOhm @ 10A, 10V	Surface Mount	3.5V @ 1mA	100 nC @ 10 V	250 V	±20V	4000 pF @ 10 V	-	-	TO-220SM	-	100W (Tc)	150°C (TJ)

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