Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 47

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK25E60X5,S1X MOSFET N-CH 600V 25A TO220 Toshiba Semiconductor and Storage	100	-	询价单	数据表	DTMOSIV-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	10V	140mOhm @ 7.5A, 10V	Through Hole	4.5V @ 1.2mA	60 nC @ 10 V	600 V	±30V	2400 pF @ 300 V	-	-	TO-220	-	180W (Tc)	150°C (TJ)
TK25N60X5,S1F MOSFET N-CH 600V 25A TO247 Toshiba Semiconductor and Storage	76	-	询价单	数据表	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	10V	140mOhm @ 7.5A, 10V	Through Hole	4.5V @ 1.2mA	60 nC @ 10 V	600 V	±30V	2400 pF @ 300 V	-	-	TO-247	-	180W (Tc)	150°C (TJ)
TK20E60W,S1VX MOSFET N-CH 600V 20A TO220 Toshiba Semiconductor and Storage	58	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	155mOhm @ 10A, 10V	Through Hole	3.7V @ 1mA	48 nC @ 10 V	600 V	±30V	1680 pF @ 300 V	-	-	TO-220	-	165W (Tc)	150°C (TJ)
TK110N65Z,S1F POWER MOSFET TRANSISTOR TO-247(O Toshiba Semiconductor and Storage	35	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta)	10V	110mOhm @ 12A, 10V	Through Hole	4V @ 1.02mA	40 nC @ 10 V	650 V	±30V	2250 pF @ 300 V	-	-	TO-247	-	190W (Tc)	150°C
TK28N65W,S1F MOSFET N-CH 650V 27.6A TO247 Toshiba Semiconductor and Storage	70	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	Through Hole	3.5V @ 1.6mA	75 nC @ 10 V	650 V	±30V	3000 pF @ 300 V	-	-	TO-247	-	230W (Tc)	150°C (TJ)
TK20N60W,S1VF MOSFET N-CH 600V 20A TO247 Toshiba Semiconductor and Storage	36	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	155mOhm @ 10A, 10V	Through Hole	3.7V @ 1mA	48 nC @ 10 V	600 V	±30V	1680 pF @ 300 V	-	-	TO-247	-	165W (Tc)	150°C (TJ)
TK31E60W,S1VX MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	42	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	Through Hole	3.7V @ 1.5mA	86 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	TO-220	-	230W (Tc)	150°C (TJ)
TK35N65W5,S1F MOSFET N-CH 650V 35A TO247 Toshiba Semiconductor and Storage	30	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Ta)	10V	95mOhm @ 17.5A, 10V	Through Hole	4.5V @ 2.1mA	115 nC @ 10 V	650 V	±30V	4100 pF @ 300 V	-	-	TO-247	-	270W (Tc)	150°C (TJ)
TW107Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 10 Toshiba Semiconductor and Storage	90	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	20A (Tc)	18V	152mOhm @ 10A, 18V	Through Hole	5V @ 1.2mA	21 nC @ 18 V	650 V	+25V, -10V	600 pF @ 400 V	-	-	TO-247-4L(X)	-	76W (Tc)	175°C
TK31J60W5,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	30	-	询价单	数据表	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	Through Hole	3.7V @ 1.5mA	105 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	TO-3P(N)	-	230W (Tc)	150°C (TJ)

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