Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 45

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK6A60W,S4VX MOSFET N-CH 600V 6.2A TO220SIS Toshiba Semiconductor and Storage	40	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6.2A (Ta)	10V	750mOhm @ 3.1A, 10V	Through Hole	3.7V @ 310µA	12 nC @ 10 V	600 V	±30V	390 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK10Q60W,S1VQ MOSFET N-CH 600V 9.7A IPAK Toshiba Semiconductor and Storage	75	-	询价单	数据表	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Ta)	10V	430mOhm @ 4.9A, 10V	Through Hole	3.7V @ 500µA	20 nC @ 10 V	600 V	±30V	700 pF @ 300 V	-	-	IPAK	-	80W (Tc)	150°C (TJ)
TK13A45D(STA4,Q,M) MOSFET N-CH 450V 13A TO220SIS Toshiba Semiconductor and Storage	32	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	10V	460mOhm @ 6.5A, 10V	Through Hole	4V @ 1mA	25 nC @ 10 V	450 V	±30V	1350 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK8Q60W,S1VQ MOSFET N-CH 600V 8A IPAK Toshiba Semiconductor and Storage	72	-	询价单	数据表	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	500mOhm @ 4A, 10V	Through Hole	3.7V @ 400µA	18.5 nC @ 10 V	600 V	±30V	570 pF @ 300 V	-	-	IPAK	-	80W (Tc)	150°C (TJ)
TK8A60W,S4VX MOSFET N-CH 600V 8A TO220SIS Toshiba Semiconductor and Storage	39	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	500mOhm @ 4A, 10V	Through Hole	3.7V @ 400µA	18.5 nC @ 10 V	600 V	±30V	570 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK16E60W,S1VX MOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage	68	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Through Hole	3.7V @ 790µA	38 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-220	-	130W (Tc)	150°C (TJ)
TK12E60W,S1VX MOSFET N CH 600V 11.5A TO-220 Toshiba Semiconductor and Storage	50	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	Through Hole	3.7V @ 600µA	25 nC @ 10 V	600 V	±30V	890 pF @ 300 V	-	-	TO-220	-	110W (Tc)	150°C (TJ)
TK12A60D(STA4,Q,M) MOSFET N-CH 600V 12A TO220SIS Toshiba Semiconductor and Storage	88	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	550mOhm @ 6A, 10V	Through Hole	4V @ 1mA	38 nC @ 10 V	600 V	±30V	1800 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK10E80W,S1X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	50	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.5A (Ta)	10V	550mOhm @ 4.8A, 10V	Through Hole	4V @ 450µA	19 nC @ 10 V	800 V	±20V	1150 pF @ 300 V	-	-	TO-220	-	130W (Tc)	150°C
TK10A60W,S4VX MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	28	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	Through Hole	3.7V @ 500µA	20 nC @ 10 V	600 V	±30V	700 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)

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