Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 40

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK14N65W5,S1F MOSFET N-CH 650V 13.7A TO247 Toshiba Semiconductor and Storage	30	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13.7A (Ta)	10V	300mOhm @ 6.9A, 10V	Through Hole	4.5V @ 690µA	40 nC @ 10 V	650 V	±30V	1300 pF @ 300 V	-	-	TO-247	-	130W (Tc)	150°C (TJ)
TK25N60X,S1F MOSFET N-CH 600V 25A TO247 Toshiba Semiconductor and Storage	26	-	询价单	数据表	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	10V	125mOhm @ 7.5A, 10V	Through Hole	3.5V @ 1.2mA	40 nC @ 10 V	600 V	±30V	2400 pF @ 300 V	-	-	TO-247	-	180W (Tc)	150°C (TJ)
TK090A65Z,S4X MOSFET N-CH 650V 30A TO220SIS Toshiba Semiconductor and Storage	68	-	询价单	数据表	DTMOSVI	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	10V	90mOhm @ 15A, 10V	Through Hole	4V @ 1.27mA	47 nC @ 10 V	650 V	±30V	2780 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C
TK28A65W,S5X MOSFET N-CH 650V 27.6A TO220SIS Toshiba Semiconductor and Storage	100	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	Through Hole	3.5V @ 1.6mA	75 nC @ 10 V	650 V	±30V	3000 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK16J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	42	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Through Hole	3.7V @ 790µA	38 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-3P(N)	-	130W (Tc)	150°C
TK39J60W,S1VQ MOSFET N-CH 600V 38.8A TO3P Toshiba Semiconductor and Storage	12	-	询价单	数据表	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	Through Hole	3.7V @ 1.9mA	110 nC @ 10 V	600 V	±30V	4100 pF @ 300 V	-	-	TO-3P(N)	-	270W (Tc)	150°C (TJ)
TK040Z65Z,S1F MOSFET N-CH 650V 57A TO247-4L Toshiba Semiconductor and Storage	22	-	询价单	数据表	DTMOSVI	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Ta)	10V	40mOhm @ 28.5A, 10V	Through Hole	4V @ 2.85mA	105 nC @ 10 V	650 V	±30V	6250 pF @ 300 V	-	-	TO-247-4L(T)	-	360W (Tc)	150°C
SSM5H90ATU,LF MOSFET N-CH 20V 2.4A UFV Toshiba Semiconductor and Storage	635	-	询价单	数据表	-	5-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2.4A (Ta)	2.5V, 4V	65mOhm @ 1.5A, 4V	Surface Mount	1.2V @ 1mA	2.2 nC @ 4 V	20 V	±10V	200 pF @ 10 V	-	-	UFV	-	500mW (Ta)	150°C
SSM6K781G,LF MOSFET N-CH 12V 7A 6WCSP6C Toshiba Semiconductor and Storage	569	-	询价单	数据表	U-MOSVII-H	6-UFBGA, WLCSP	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	1.5V, 4.5V	18mOhm @ 1.5A, 4.5V	Surface Mount	1V @ 250µA	5.4 nC @ 4.5 V	12 V	±8V	600 pF @ 6 V	-	-	6-WCSPC (1.5x1.0)	-	1.6W (Ta)	150°C (TJ)
TK4A50D(STA4,Q,M) MOSFET N-CH 500V 4A TO220SIS Toshiba Semiconductor and Storage	35	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	10V	2Ohm @ 2A, 10V	Through Hole	4.4V @ 1mA	9 nC @ 10 V	500 V	±30V	380 pF @ 25 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)

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