Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 42

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK5A50D(STA4,Q,M) MOSFET N-CH 500V 5A TO220SIS Toshiba Semiconductor and Storage	55	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	Through Hole	4.4V @ 1mA	11 nC @ 10 V	500 V	±30V	490 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK5Q65W,S1Q MOSFET N-CH 650V 5.2A IPAK Toshiba Semiconductor and Storage	55	-	询价单	数据表	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.2A (Ta)	10V	1.22Ohm @ 2.6A, 10V	Through Hole	3.5V @ 170µA	10.5 nC @ 10 V	650 V	±30V	380 pF @ 300 V	-	-	IPAK	-	60W (Tc)	150°C (TJ)
TK9A45D(STA4,Q,M) MOSFET N-CH 450V 9A TO220SIS Toshiba Semiconductor and Storage	50	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	10V	770mOhm @ 4.5A, 10V	Through Hole	4V @ 1mA	16 nC @ 10 V	450 V	±30V	800 pF @ 25 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK5A53D(STA4,Q,M) MOSFET N-CH 525V 5A TO220SIS Toshiba Semiconductor and Storage	50	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	Through Hole	4.4V @ 1mA	11 nC @ 10 V	525 V	±30V	540 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK6A50D(STA4,Q,M) MOSFET N-CH 500V 6A TO220SIS Toshiba Semiconductor and Storage	30	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	10V	1.4Ohm @ 3A, 10V	Through Hole	4.4V @ 1mA	11 nC @ 10 V	500 V	±30V	540 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK6Q65W,S1Q MOSFET N-CH 650V 5.8A IPAK Toshiba Semiconductor and Storage	74	-	询价单	数据表	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.8A (Ta)	10V	1.05Ohm @ 2.9A, 10V	Through Hole	3.5V @ 180µA	11 nC @ 10 V	650 V	±30V	390 pF @ 300 V	-	-	IPAK	-	60W (Tc)	150°C (TJ)
TK3R1E04PL,S1X MOSFET N-CH 40V 100A TO220 Toshiba Semiconductor and Storage	51	-	询价单	数据表	U-MOSIX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	3.8mOhm @ 30A, 4.5V	Through Hole	2.4V @ 500µA	63.4 nC @ 10 V	40 V	±20V	4670 pF @ 20 V	-	-	TO-220	-	87W (Tc)	175°C (TJ)
TK8A65W,S5X MOSFET N-CH 650V 7.8A TO220SIS Toshiba Semiconductor and Storage	40	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7.8A (Ta)	10V	650mOhm @ 3.9A, 10V	Through Hole	3.5V @ 300µA	16 nC @ 10 V	650 V	±30V	570 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK560A60Y,S4X MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	50	-	询价单	数据表	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	560mOhm @ 3.5A, 10V	Through Hole	4V @ 240µA	14.5 nC @ 10 V	600 V	±30V	380 pF @ 300 V	-	-	TO-220SIS	-	30W	150°C (TJ)
TK5A60D(STA4,Q,M) MOSFET N-CH 600V 5A TO220SIS Toshiba Semiconductor and Storage	41	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.43Ohm @ 2.5A, 10V	Through Hole	4.4V @ 1mA	16 nC @ 10 V	600 V	±30V	700 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)

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