Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 41

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPH3R003PL,LQ MOSFET N-CH 30V 88A 8SOP Toshiba Semiconductor and Storage	54	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	88A (Tc)	4.5V, 10V	4.2mOhm @ 44A, 4.5V	Surface Mount	2.1V @ 300µA	50 nC @ 10 V	30 V	±20V	3825 pF @ 15 V	-	-	8-SOP Advance (5x5)	-	90W (Tc)	175°C (TJ)
TK8A25DA,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	32	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7.5A (Ta)	10V	500mOhm @ 3.8A, 10V	Through Hole	3.5V @ 1mA	16 nC @ 10 V	250 V	±20V	550 pF @ 100 V	-	-	TO-220SIS	-	30W (Tc)	150°C
TK46A08N1,S4X MOSFET N-CH 80V 46A TO220SIS Toshiba Semiconductor and Storage	50	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	46A (Tc)	10V	8.4mOhm @ 23A, 10V	Through Hole	4V @ 500µA	37 nC @ 10 V	80 V	±20V	2500 pF @ 40 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK5A45DA(STA4,Q,M) MOSFET N-CH 450V 4.5A TO220SIS Toshiba Semiconductor and Storage	28	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Ta)	10V	1.75Ohm @ 2.3A, 10V	Through Hole	4.4V @ 1mA	9 nC @ 10 V	450 V	±30V	380 pF @ 25 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK5A80E,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	45	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	2.4Ohm @ 2.5A, 10V	Through Hole	4V @ 500µA	20 nC @ 10 V	800 V	±30V	950 pF @ 25 V	-	-	TO-220SIS	-	40W (Tc)	150°C
TK2A65D(STA4,Q,M) MOSFET N-CH 650V 2A TO220SIS Toshiba Semiconductor and Storage	99	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	10V	3.26Ohm @ 1A, 10V	Through Hole	4.4V @ 1mA	9 nC @ 10 V	650 V	±30V	380 pF @ 25 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK35E08N1,S1X MOSFET N-CH 80V 55A TO220 Toshiba Semiconductor and Storage	41	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	10V	12.2mOhm @ 17.5A, 10V	Through Hole	4V @ 300µA	25 nC @ 10 V	80 V	±20V	1700 pF @ 40 V	-	-	TO-220	-	72W (Tc)	150°C (TJ)
TK3A60DA(STA4,Q,M) MOSFET N-CH 600V 2.5A TO220SIS Toshiba Semiconductor and Storage	42	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2.5A (Ta)	10V	2.8Ohm @ 1.3A, 10V	Through Hole	4.4V @ 1mA	9 nC @ 10 V	600 V	±30V	380 pF @ 25 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK4A80E,S4X PB-FPOWERMOSFETTRANSISTORTO-220S Toshiba Semiconductor and Storage	30	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	10V	3.5Ohm @ 2A, 10V	Through Hole	4V @ 400µA	15 nC @ 10 V	800 V	±30V	650 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C
TK46E08N1,S1X MOSFET N-CH 80V 80A TO220 Toshiba Semiconductor and Storage	58	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8.4mOhm @ 23A, 10V	Through Hole	4V @ 500µA	37 nC @ 10 V	80 V	±20V	2500 pF @ 40 V	-	-	TO-220	-	103W (Tc)	150°C (TJ)

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