Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 43

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK8A45D(STA4,Q,M) MOSFET N-CH 450V 8A TO220SIS Toshiba Semiconductor and Storage	50	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	900mOhm @ 4A, 10V	Through Hole	4.4V @ 1mA	16 nC @ 10 V	450 V	±30V	700 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK7A55D(STA4,Q,M) MOSFET N-CH 550V 7A TO220SIS Toshiba Semiconductor and Storage	45	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	1.25Ohm @ 3.5A, 10V	Through Hole	4.4V @ 1mA	16 nC @ 10 V	550 V	±30V	700 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK3A65D(STA4,Q,M) MOSFET N-CH 650V 3A TO220SIS Toshiba Semiconductor and Storage	26	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	10V	2.25Ohm @ 1.5A, 10V	Through Hole	4.4V @ 1mA	11 nC @ 10 V	650 V	±30V	540 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK5A65DA(STA4,Q,M) MOSFET N-CH 650V 4.5A TO220SIS Toshiba Semiconductor and Storage	32	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Ta)	10V	1.67Ohm @ 2.3A, 10V	Through Hole	4.4V @ 1mA	16 nC @ 10 V	650 V	±30V	700 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK5A65D(STA4,Q,M) MOSFET N-CH 650V 5A TO220SIS Toshiba Semiconductor and Storage	28	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.43Ohm @ 2.5A, 10V	Through Hole	4V @ 1mA	16 nC @ 10 V	650 V	±30V	800 pF @ 25 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK11A50D(STA4,Q,M) MOSFET N-CH 500V 11A TO220SIS Toshiba Semiconductor and Storage	50	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	10V	600mOhm @ 5.5A, 10V	Through Hole	4V @ 1mA	24 nC @ 10 V	500 V	±30V	1200 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK56E12N1,S1X MOSFET N CH 120V 56A TO-220 Toshiba Semiconductor and Storage	52	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	56A (Ta)	10V	7mOhm @ 28A, 10V	Through Hole	4V @ 1mA	69 nC @ 10 V	120 V	±20V	4200 pF @ 60 V	-	-	TO-220	-	168W (Tc)	150°C (TJ)
TK8Q65W,S1Q MOSFET N-CH 650V 7.8A IPAK Toshiba Semiconductor and Storage	75	-	询价单	数据表	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7.8A (Ta)	10V	670mOhm @ 3.9A, 10V	Through Hole	3.5V @ 300µA	16 nC @ 10 V	650 V	±30V	570 pF @ 300 V	-	-	IPAK	-	80W (Tc)	150°C (TJ)
TK8A55DA(STA4,Q,M) MOSFET N-CH 550V 7.5A TO220SIS Toshiba Semiconductor and Storage	48	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7.5A (Ta)	10V	1.07Ohm @ 3.8A, 10V	Through Hole	4V @ 1mA	16 nC @ 10 V	550 V	±30V	800 pF @ 25 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK18A30D,S5X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	48	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	10V	139mOhm @ 9A, 10V	Through Hole	3.5V @ 1mA	60 nC @ 10 V	300 V	±20V	2600 pF @ 100 V	-	-	TO-220SIS	-	45W (Tc)	150°C

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