Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 39

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK7A60W5,S5VX MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	46	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	650mOhm @ 3.5A, 10V	Through Hole	4.5V @ 350µA	16 nC @ 10 V	600 V	±30V	490 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK380A65Y,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	87	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Tc)	10V	380mOhm @ 4.9A, 10V	Through Hole	4V @ 360µA	20 nC @ 10 V	650 V	±30V	590 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C
TK6A80E,S4X MOSFET N-CH 800V 6A TO220SIS Toshiba Semiconductor and Storage	50	-	询价单	数据表	π-MOSVIII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	10V	1.7Ohm @ 3A, 10V	Through Hole	4V @ 600µA	32 nC @ 10 V	800 V	±30V	1350 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK17A65W,S5X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	34	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17.3A (Ta)	10V	200mOhm @ 8.7A, 10V	Through Hole	3.5V @ 900µA	45 nC @ 10 V	650 V	±30V	1800 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C
TK12A80W,S4X MOSFET N-CH 800V 11.5A TO220SIS Toshiba Semiconductor and Storage	40	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	10V	450mOhm @ 5.8A, 10V	Through Hole	4V @ 570µA	23 nC @ 10 V	800 V	±20V	1400 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C
TK17A65W5,S5X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	45	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17.3A (Ta)	10V	230mOhm @ 8.7A, 10V	Through Hole	4.5V @ 900µA	50 nC @ 10 V	650 V	±30V	1800 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C
TK155A65Z,S4X MOSFET N-CH 650V 18A TO220SIS Toshiba Semiconductor and Storage	40	-	询价单	数据表	DTMOSVI	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	10V	155mOhm @ 9A, 10V	Through Hole	4V @ 730µA	29 nC @ 10 V	650 V	±30V	1635 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	150°C
TK20N60W5,S1VF MOSFET N-CH 600V 20A TO247 Toshiba Semiconductor and Storage	29	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	175mOhm @ 10A, 10V	Through Hole	4.5V @ 1mA	55 nC @ 10 V	600 V	±30V	1800 pF @ 300 V	-	-	TO-247	-	165W (Tc)	150°C (TJ)
TK16N60W,S1VF MOSFET N CH 600V 15.8A TO247 Toshiba Semiconductor and Storage	26	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Through Hole	3.7V @ 790µA	38 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-247	-	130W (Tc)	150°C (TJ)
TK110A65Z,S4X MOSFET N-CH 650V 24A TO220SIS Toshiba Semiconductor and Storage	42	-	询价单	数据表	DTMOSVI	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta)	10V	110mOhm @ 12A, 10V	Through Hole	4V @ 1.02mA	40 nC @ 10 V	650 V	±30V	2250 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C

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