Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 38

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK62Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	11	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	61.8A (Ta)	10V	40mOhm @ 21A, 10V	Through Hole	3.5V @ 3.1mA	135 nC @ 10 V	600 V	±30V	6500 pF @ 300 V	-	-	TO-247-4L(T)	-	400W (Tc)	150°C
TW060N120C,S1F G3 1200V SIC-MOSFET TO-247 60MO Toshiba Semiconductor and Storage	15	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	36A (Tc)	18V	78mOhm @ 18A, 18V	Through Hole	5V @ 4.2mA	46 nC @ 18 V	1200 V	+25V, -10V	1530 pF @ 800 V	-	-	TO-247	-	170W (Tc)	175°C
TW027N65C,S1F G3 650V SIC-MOSFET TO-247 27MOH Toshiba Semiconductor and Storage	35	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	58A (Tc)	18V	37mOhm @ 29A, 18V	Through Hole	5V @ 3mA	65 nC @ 18 V	650 V	+25V, -10V	2288 pF @ 400 V	-	-	TO-247	-	156W (Tc)	175°C
TW030N120C,S1F G3 1200V SIC-MOSFET TO-247 30MO Toshiba Semiconductor and Storage	30	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	60A (Tc)	18V	40mOhm @ 30A, 18V	Through Hole	5V @ 13mA	82 nC @ 18 V	1200 V	+25V, -10V	2925 pF @ 800 V	-	-	TO-247	-	249W (Tc)	175°C
TW015N65C,S1F G3 650V SIC-MOSFET TO-247 15MOH Toshiba Semiconductor and Storage	52	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	100A (Tc)	18V	21mOhm @ 50A, 18V	Through Hole	5V @ 11.7mA	128 nC @ 18 V	650 V	+25V, -10V	4850 pF @ 400 V	-	-	TO-247	-	342W (Tc)	175°C
SSM6K404TU,LF MOSFET N-CH 20V 3A UF6 Toshiba Semiconductor and Storage	37	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	1.5V, 4V	55mOhm @ 2A, 4V	Surface Mount	1V @ 1mA	5.9 nC @ 4 V	20 V	±10V	400 pF @ 10 V	-	-	UF6	-	500mW (Ta)	150°C
TK35A08N1,S4X MOSFET N-CH 80V 35A TO220SIS Toshiba Semiconductor and Storage	50	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	12.2mOhm @ 17.5A, 10V	Through Hole	4V @ 300µA	25 nC @ 10 V	80 V	±20V	1700 pF @ 40 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK380A60Y,S4X MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	43	-	询价单	数据表	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Tc)	10V	380mOhm @ 4.9A, 10V	Through Hole	4V @ 360µA	20 nC @ 10 V	600 V	±30V	590 pF @ 300 V	-	-	TO-220SIS	-	30W	150°C (TJ)
TK5R1A08QM,S4X UMOS10 TO-220SIS 80V 5.1MOHM Toshiba Semiconductor and Storage	43	-	询价单	数据表	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	6V, 10V	5.1mOhm @ 35A, 10V	Through Hole	3.5V @ 700µA	54 nC @ 10 V	80 V	±20V	3980 pF @ 40 V	-	-	TO-220SIS	-	45W (Tc)	175°C
TK34E10N1,S1X MOSFET N-CH 100V 75A TO220 Toshiba Semiconductor and Storage	35	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	9.5mOhm @ 17A, 10V	Through Hole	4V @ 500µA	38 nC @ 10 V	100 V	±20V	2600 pF @ 50 V	-	-	TO-220	-	103W (Tc)	150°C (TJ)

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