Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 36

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK155E65Z,S1X 650V DTMOS VI TO-220 155MOHM Toshiba Semiconductor and Storage	45	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	10V	155mOhm @ 9A, 10V	Through Hole	4V @ 730µA	29 nC @ 10 V	650 V	±30V	1635 pF @ 300 V	-	-	TO-220	-	150W (Tc)	150°C
TK17A80W,S4X MOSFET N-CH 800V 17A TO220SIS Toshiba Semiconductor and Storage	91	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17A (Ta)	10V	290mOhm @ 8.5A, 10V	Through Hole	4V @ 850µA	32 nC @ 10 V	800 V	±20V	2050 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C
TK25A60X,S5X MOSFET N-CH 600V 25A TO220SIS Toshiba Semiconductor and Storage	34	-	询价单	数据表	DTMOSIV-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	10V	125mOhm @ 7.5A, 10V	Through Hole	3.5V @ 1.2mA	40 nC @ 10 V	600 V	±30V	2400 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK110E65Z,S1X 650V DTMOS VI TO-220 110MOHM Toshiba Semiconductor and Storage	50	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta)	10V	110mOhm @ 12A, 10V	Through Hole	4V @ 1.02mA	40 nC @ 10 V	650 V	±30V	2250 pF @ 300 V	-	-	TO-220	-	190W (Tc)	150°C
TK17E80W,S1X MOSFET N-CHANNEL 800V 17A TO220 Toshiba Semiconductor and Storage	44	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17A (Ta)	10V	290mOhm @ 8.5A, 10V	Through Hole	4V @ 850µA	32 nC @ 10 V	800 V	±20V	2050 pF @ 300 V	-	-	TO-220	-	180W (Tc)	150°C
TK090E65Z,S1X 650V DTMOS VI TO-220 90MOHM Toshiba Semiconductor and Storage	61	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	10V	90mOhm @ 15A, 10V	Through Hole	4V @ 1.27mA	47 nC @ 10 V	650 V	±30V	2780 pF @ 300 V	-	-	TO-220	-	230W (Tc)	150°C
TK20J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	33	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	155mOhm @ 10A, 10V	Through Hole	3.7V @ 1mA	48 nC @ 10 V	600 V	±30V	1680 pF @ 300 V	-	-	TO-3P(N)	-	165W (Tc)	150°C
TK31E60X,S1X MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	87	-	询价单	数据表	DTMOSIV-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	Through Hole	3.5V @ 1.5mA	65 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	TO-220	-	230W (Tc)	150°C (TJ)
TK31N60X,S1F MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	26	-	询价单	数据表	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	Through Hole	3.5V @ 1.5mA	65 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	TO-247	-	230W (Tc)	150°C (TJ)
TK090N65Z,S1F MOSFET N-CH 650V 30A TO247 Toshiba Semiconductor and Storage	26	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	10V	90mOhm @ 15A, 10V	Through Hole	4V @ 1.27mA	47 nC @ 10 V	650 V	±30V	2780 pF @ 300 V	-	-	TO-247	-	230W (Tc)	150°C

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