Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 37

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK28N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	48	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27.6A (Ta)	10V	130mOhm @ 13.8A, 10V	Through Hole	4.5V @ 1.6mA	90 nC @ 10 V	650 V	±30V	3000 pF @ 300 V	-	-	TO-247	-	230W (Tc)	150°C
TK31N60W5,S1VF MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	48	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	99mOhm @ 15.4A, 10V	Through Hole	4.5V @ 1.5mA	105 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	TO-247	-	230W (Tc)	150°C (TJ)
TW107N65C,S1F G3 650V SIC-MOSFET TO-247 107MO Toshiba Semiconductor and Storage	68	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	20A (Tc)	18V	145mOhm @ 10A, 18V	Through Hole	5V @ 1.2mA	21 nC @ 18 V	650 V	+25V, -10V	600 pF @ 400 V	-	-	TO-247	-	76W (Tc)	175°C
TK39A60W,S4VX MOSFET N-CH 600V 38.8A TO220SIS Toshiba Semiconductor and Storage	54	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	Through Hole	3.7V @ 1.9mA	110 nC @ 10 V	600 V	±30V	4100 pF @ 300 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK62N60X,S1F MOSFET N-CH 600V 61.8A TO247 Toshiba Semiconductor and Storage	82	-	询价单	数据表	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	61.8A (Ta)	10V	40mOhm @ 21A, 10V	Through Hole	3.5V @ 3.1mA	135 nC @ 10 V	600 V	±30V	6500 pF @ 300 V	-	-	TO-247	-	400W (Tc)	150°C (TJ)
TK49N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	30	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49.2A (Ta)	10V	57mOhm @ 24.6A, 10V	Through Hole	4.5V @ 2.5mA	185 nC @ 10 V	650 V	±30V	6500 pF @ 300 V	-	-	TO-247	-	400W (Tc)	150°C
TK39J60W5,S1VQ MOSFET N-CH 600V 38.8A TO3P Toshiba Semiconductor and Storage	31	-	询价单	数据表	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	Through Hole	3.7V @ 1.9mA	135 nC @ 10 V	600 V	±30V	4100 pF @ 300 V	-	-	TO-3P(N)	-	270W (Tc)	150°C (TJ)
TK31Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	26	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	Through Hole	3.5V @ 1.5mA	65 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	TO-247-4L(T)	-	230W (Tc)	150°C
TK49N65W,S1F PB-F POWER MOSFET TRANSISTOR TO2 Toshiba Semiconductor and Storage	6	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49.2A (Ta)	10V	55mOhm @ 24.6A, 10V	Through Hole	3.5V @ 2.5mA	160 nC @ 10 V	650 V	±30V	6500 pF @ 300 V	-	-	TO-247	-	400W (Tc)	150°C
TW048N65C,S1F G3 650V SIC-MOSFET TO-247 48MOH Toshiba Semiconductor and Storage	29	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40A (Tc)	18V	65mOhm @ 20A, 18V	Through Hole	5V @ 1.6mA	41 nC @ 18 V	650 V	+25V, -10V	1362 pF @ 400 V	-	-	TO-247	-	132W (Tc)	175°C

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