Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 35

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK10A60W5,S5VX MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	48	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Ta)	10V	450mOhm @ 4.9A, 10V	Through Hole	4.5V @ 500µA	25 nC @ 10 V	600 V	±30V	720 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK3R3E08QM,S1X UMOS10 TO-220AB 80V 3.3MOHM Toshiba Semiconductor and Storage	58	-	询价单	数据表	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	6V, 10V	3.3mOhm @ 50A, 10V	Through Hole	3.5V @ 1.3mA	110 nC @ 10 V	80 V	±20V	7670 pF @ 40 V	-	-	TO-220	-	230W (Tc)	175°C
TK8A65D(STA4,Q,M) MOSFET N-CH 650V 8A TO220SIS Toshiba Semiconductor and Storage	38	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	840mOhm @ 4A, 10V	Through Hole	4V @ 1mA	25 nC @ 10 V	650 V	±30V	1350 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK72E08N1,S1X MOSFET N-CH 80V 72A TO220 Toshiba Semiconductor and Storage	27	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	72A (Ta)	10V	4.3mOhm @ 36A, 10V	Through Hole	4V @ 1mA	81 nC @ 10 V	80 V	±20V	5500 pF @ 40 V	-	-	TO-220	-	192W (Tc)	150°C (TJ)
TK100E06N1,S1X MOSFET N CH 60V 100A TO-220 Toshiba Semiconductor and Storage	50	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Ta)	10V	2.3mOhm @ 50A, 10V	Through Hole	4V @ 1mA	140 nC @ 10 V	60 V	±20V	10500 pF @ 30 V	-	-	TO-220	-	255W (Tc)	150°C (TJ)
TK16A60W,S4VX MOSFET N-CH 600V 15.8A TO220SIS Toshiba Semiconductor and Storage	26	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Through Hole	3.7V @ 790µA	38 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK190A65Z,S4X MOSFET N-CH 650V 15A TO220SIS Toshiba Semiconductor and Storage	50	-	询价单	数据表	DTMOSVI	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	10V	190mOhm @ 7.5A, 10V	Through Hole	4V @ 610µA	25 nC @ 10 V	650 V	±30V	1370 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	150°C
TK14A65W,S5X MOSFET N-CH 650V 13.7A TO220SIS Toshiba Semiconductor and Storage	47	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13.7A (Ta)	10V	250mOhm @ 6.9A, 10V	Through Hole	3.5V @ 690µA	35 nC @ 10 V	650 V	±30V	1300 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK20A60W,S5VX MOSFET N-CH 600V 20A TO220SIS Toshiba Semiconductor and Storage	60	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	155mOhm @ 10A, 10V	Through Hole	3.7V @ 1mA	48 nC @ 10 V	600 V	±30V	1680 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK10E60W,S1VX MOSFET N-CH 600V 9.7A TO220 Toshiba Semiconductor and Storage	66	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	Through Hole	3.7V @ 500µA	20 nC @ 10 V	600 V	±30V	700 pF @ 300 V	-	-	TO-220	-	100W (Tc)	150°C (TJ)

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