Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 34

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK650A60F,S4X MOSFET N-CH 600V 11A TO220SIS Toshiba Semiconductor and Storage	74	-	询价单	数据表	U-MOSIX	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	10V	650mOhm @ 5.5A, 10V	Through Hole	4V @ 1.16mA	34 nC @ 10 V	600 V	±30V	1320 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C
TK32A12N1,S4X MOSFET N-CH 120V 32A TO220SIS Toshiba Semiconductor and Storage	66	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	32A (Tc)	10V	13.8mOhm @ 16A, 10V	Through Hole	4V @ 500µA	34 nC @ 10 V	120 V	±20V	2000 pF @ 60 V	-	-	TO-220SIS	-	30W (Tc)	150°C (TJ)
TK7R4A10PL,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	100	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	7.4mOhm @ 25A, 10V	Through Hole	2.5V @ 500µA	44 nC @ 10 V	100 V	±20V	2800 pF @ 50 V	-	-	TO-220SIS	-	42W (Tc)	175°C
TK22E10N1,S1X MOSFET N CH 100V 52A TO220 Toshiba Semiconductor and Storage	31	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	52A (Tc)	10V	13.8mOhm @ 11A, 10V	Through Hole	4V @ 300µA	28 nC @ 10 V	100 V	±20V	1800 pF @ 50 V	-	-	TO-220	-	72W (Tc)	150°C (TJ)
TK6R7A10PL,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	42	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	4.5V, 10V	6.7mOhm @ 28A, 10V	Through Hole	2.5V @ 500µA	58 nC @ 10 V	100 V	±20V	3455 pF @ 50 V	-	-	TO-220SIS	-	42W (Tc)	175°C
TK7A90E,S4X MOSFET N-CH 900V 7A TO220SIS Toshiba Semiconductor and Storage	49	-	询价单	数据表	π-MOSVIII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	2Ohm @ 3.5A, 10V	Through Hole	4V @ 700µA	32 nC @ 10 V	900 V	±30V	1350 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK3R2E06PL,S1X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	88	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	3.2mOhm @ 50A, 10V	Through Hole	2.5V @ 700µA	71 nC @ 10 V	60 V	±20V	5000 pF @ 30 V	-	-	TO-220	-	168W (Tc)	175°C
TK40A10N1,S4X MOSFET N-CH 100V 40A TO220SIS Toshiba Semiconductor and Storage	26	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	10V	8.2mOhm @ 20A, 10V	Through Hole	4V @ 500µA	49 nC @ 10 V	100 V	±20V	3000 pF @ 50 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK33S10N1L,LQ MOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage	97	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	33A (Ta)	4.5V, 10V	9.7mOhm @ 16.5A, 10V	Surface Mount	2.5V @ 500µA	33 nC @ 10 V	100 V	±20V	2250 pF @ 10 V	-	-	DPAK+	-	125W (Tc)	175°C
TK4R1A10PL,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	50	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	4.1mOhm @ 40A, 10V	Through Hole	2.5V @ 1mA	104 nC @ 10 V	100 V	±20V	6320 pF @ 50 V	-	-	TO-220SIS	-	54W (Tc)	175°C

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