Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 33

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TW045Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 4 Toshiba Semiconductor and Storage	50	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40A (Tc)	18V	62mOhm @ 20A, 18V	Through Hole	5V @ 6.7mA	57 nC @ 18 V	1200 V	+25V, -10V	1969 pF @ 800 V	-	-	TO-247-4L(X)	-	182W (Tc)	175°C
TW045N120C,S1F G3 1200V SIC-MOSFET TO-247 45MO Toshiba Semiconductor and Storage	71	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40A (Tc)	18V	59mOhm @ 20A, 18V	Through Hole	5V @ 6.7mA	57 nC @ 18 V	1200 V	+25V, -10V	1969 pF @ 800 V	-	-	TO-247	-	182W (Tc)	175°C
SSM6G18NU,LF MOSFET P-CH 20V 2A 6UDFN Toshiba Semiconductor and Storage	785	-	询价单	数据表	-	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	2A (Ta)	1.5V, 4.5V	112mOhm @ 1A, 4.5V	Surface Mount	1V @ 1mA	4.6 nC @ 4.5 V	20 V	±8V	270 pF @ 10 V	-	Schottky Diode (Isolated)	6-µDFN (2x2)	-	1W (Ta)	150°C (TJ)
SSM6J503NU,LF MOSFET P-CH 20V 6A 6UDFNB Toshiba Semiconductor and Storage	820	-	询价单	数据表	U-MOSVI	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	6A (Ta)	1.5V, 4.5V	32.4mOhm @ 3A, 4.5V	Surface Mount	1V @ 1mA	12.8 nC @ 10 V	20 V	±8V	840 pF @ 10 V	-	-	6-UDFNB (2x2)	-	1W (Ta)	150°C (TJ)
SSM6J216FE,LF MOSFET P-CHANNEL 12V 4.8A ES6 Toshiba Semiconductor and Storage	379	-	询价单	数据表	U-MOSVI	SOT-563, SOT-666	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4.8A (Ta)	1.5V, 4.5V	32mOhm @ 3.5A, 4.5V	Surface Mount	1V @ 1mA	12.7 nC @ 4.5 V	12 V	±8V	1040 pF @ 12 V	-	-	ES6	-	700mW (Ta)	150°C
TK30E06N1,S1X MOSFET N-CH 60V 43A TO220 Toshiba Semiconductor and Storage	69	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	43A (Ta)	10V	15mOhm @ 15A, 10V	Through Hole	4V @ 200µA	16 nC @ 10 V	60 V	±20V	1050 pF @ 30 V	-	-	TO-220	-	53W (Tc)	150°C (TJ)
TK1K0A60F,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	67	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7.5A (Ta)	10V	1Ohm @ 3.8A, 10V	Through Hole	4V @ 770µA	24 nC @ 10 V	600 V	±30V	890 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	150°C
TK3R1A04PL,S4X MOSFET N-CH 40V 82A TO220SIS Toshiba Semiconductor and Storage	77	-	询价单	数据表	U-MOSIX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	82A (Tc)	4.5V, 10V	3.8mOhm @ 30A, 4.5V	Through Hole	2.4V @ 500µA	63.4 nC @ 10 V	40 V	±20V	4670 pF @ 20 V	-	-	TO-220SIS	-	36W (Tc)	175°C (TJ)
TK5R3A06PL,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	75	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	4.5V, 10V	5.3mOhm @ 28A, 10V	Through Hole	2.5V @ 300µA	36 nC @ 10 V	60 V	±20V	2380 pF @ 30 V	-	-	TO-220SIS	-	36W (Tc)	175°C
TK4R3A06PL,S4X MOSFET N-CH 60V 68A TO220SIS Toshiba Semiconductor and Storage	54	-	询价单	数据表	U-MOSIX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	68A (Tc)	4.5V, 10V	7.2mOhm @ 15A, 4.5V	Through Hole	2.5V @ 500µA	48.2 nC @ 10 V	60 V	±20V	3280 pF @ 30 V	-	-	TO-220SIS	-	36W (Tc)	175°C (TJ)

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