Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 32

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPHR9003NL1,LQ UMOS9 SOP-ADV(N) PD=78W F=1MHZ Toshiba Semiconductor and Storage	52	-	询价单	数据表	U-MOSVIII-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	4.5V, 10V	0.9mOhm @ 50A, 10V	Surface Mount	2.3V @ 1mA	74 nC @ 10 V	30 V	±20V	6900 pF @ 15 V	-	-	8-SOP Advance (5x5.75)	-	800mW (Ta), 170W (Tc)	150°C
2SK3564(STA4,Q,M) MOSFET N-CH 900V 3A TO220SIS Toshiba Semiconductor and Storage	74	-	询价单	数据表	π-MOSIV	TO-220-3 Full Pack	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	10V	4.3Ohm @ 1.5A, 10V	Through Hole	4V @ 1mA	17 nC @ 10 V	900 V	±30V	700 pF @ 25 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK8A50D(STA4,Q,M) MOSFET N-CH 500V 8A TO220SIS Toshiba Semiconductor and Storage	95	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	850mOhm @ 4A, 10V	Through Hole	4V @ 1mA	16 nC @ 10 V	500 V	±30V	800 pF @ 25 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TPH2R306NH,L1Q MOSFET N-CH 60V 60A 8SOP Toshiba Semiconductor and Storage	48	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	6.5V, 10V	2.3mOhm @ 30A, 10V	Surface Mount	4V @ 1mA	72 nC @ 10 V	60 V	±20V	6100 pF @ 30 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 78W (Tc)	150°C (TJ)
TK12A50D(STA4,Q,M) MOSFET N-CH 500V 12A TO220SIS Toshiba Semiconductor and Storage	49	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	520mOhm @ 6A, 10V	Through Hole	4V @ 1mA	25 nC @ 10 V	500 V	±30V	1350 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK15A50D(STA4,Q,M) MOSFET N-CH 500V 15A TO220SIS Toshiba Semiconductor and Storage	81	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	10V	300mOhm @ 7.5A, 10V	Through Hole	4V @ 1mA	40 nC @ 10 V	500 V	±30V	2300 pF @ 25 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK100E08N1,S1X MOSFET N-CH 80V 100A TO220 Toshiba Semiconductor and Storage	96	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Ta)	10V	3.2mOhm @ 50A, 10V	Through Hole	4V @ 1mA	130 nC @ 10 V	80 V	±20V	9000 pF @ 40 V	-	-	TO-220	-	255W (Tc)	150°C (TJ)
TK040N65Z,S1F MOSFET N-CH 650V 57A TO247 Toshiba Semiconductor and Storage	76	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Ta)	10V	40mOhm @ 28.5A, 10V	Through Hole	4V @ 2.85mA	105 nC @ 10 V	650 V	±30V	6250 pF @ 300 V	-	-	TO-247	-	360W (Tc)	150°C
TW140N120C,S1F G3 1200V SIC-MOSFET TO-247 140M Toshiba Semiconductor and Storage	70	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	20A (Tc)	18V	182mOhm @ 10A, 18V	Through Hole	5V @ 1mA	24 nC @ 18 V	1200 V	+25V, -10V	691 pF @ 800 V	-	-	TO-247	-	107W (Tc)	175°C
TK042N65Z5,S1F(S 650V DTMOS6 HSD 42MOHM TO-247 Toshiba Semiconductor and Storage	86	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55A (Ta)	10V	42mOhm @ 27.5A, 10V	Through Hole	4.5V @ 2.85mA	105 nC @ 10 V	650 V	±30V	6280 pF @ 300 V	-	-	TO-247	-	360W (Tc)	150°C

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