Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 31

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK7R0E08QM,S1X UMOS10 TO-220AB 80V 7MOHM Toshiba Semiconductor and Storage	108	-	询价单	数据表	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	64A (Tc)	6V, 10V	7mOhm @ 32A, 10V	Through Hole	3.5V @ 500µA	39 nC @ 10 V	80 V	±20V	2700 pF @ 40 V	-	-	TO-220	-	87W (Tc)	175°C
TW070J120B,S1Q SICFET N-CH 1200V 36A TO3P Toshiba Semiconductor and Storage	4,273	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	36A (Tc)	20V	90mOhm @ 18A, 20V	Through Hole	5.8V @ 20mA	67 nC @ 20 V	1200 V	±25V, -10V	1680 pF @ 800 V	-	-	TO-3P(N)	-	272W (Tc)	-55°C ~ 175°C
TPCA8026(TE12L,Q,M MOSFET N-CH 30V 45A 8SOP Toshiba Semiconductor and Storage	1,171	-	询价单	数据表	U-MOSIV	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Ta)	4.5V, 10V	2.2mOhm @ 23A, 10V	Surface Mount	2.5V @ 1mA	113 nC @ 10 V	30 V	±20V	4200 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C (TJ)
TPCA8007-H(TE12L,Q MOSFET N-CH 100V 20A 8-SOPA Toshiba Semiconductor and Storage	3,037	-	询价单	数据表	*	-	Cut Tape (CT)	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCA8009-H(TE12L,Q MOSFET N-CH 150V 7A 8SOP Toshiba Semiconductor and Storage	8,110	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	350mOhm @ 3.5A, 10V	Surface Mount	4V @ 1mA	10 nC @ 10 V	150 V	±20V	600 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C (TJ)
2SK2963(TE12L,F) MOSFET N-CH 100V 1A PW-MINI Toshiba Semiconductor and Storage	5,983	-	询价单	数据表	-	TO-243AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1A (Ta)	4V, 10V	700mOhm @ 500mA, 10V	Surface Mount	2V @ 1mA	6.3 nC @ 10 V	100 V	±20V	140 pF @ 10 V	-	-	PW-MINI	-	500mW (Ta)	150°C (TJ)
TPCF8B01(TE85L,F,M MOSFET P-CH 20V 2.7A VS-8 Toshiba Semiconductor and Storage	5,864	-	询价单	数据表	U-MOSIII	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.7A (Ta)	1.8V, 4.5V	110mOhm @ 1.4A, 4.5V	Surface Mount	1.2V @ 200µA	6 nC @ 5 V	20 V	±8V	470 pF @ 10 V	-	Schottky Diode (Isolated)	VS-8 (2.9x1.5)	-	330mW (Ta)	150°C (TJ)
SSM6J501NU,LF MOSFET P-CH 20V 10A 6UDFNB Toshiba Semiconductor and Storage	468	-	询价单	数据表	U-MOSVI	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	1.5V, 4.5V	15.3mOhm @ 4A, 4.5V	Surface Mount	1V @ 1mA	29.9 nC @ 4.5 V	20 V	±8V	2600 pF @ 10 V	-	-	6-UDFNB (2x2)	-	1W (Ta)	150°C (TJ)
SSM3K341TU,LF MOSFET N-CH 60V 6A UFM Toshiba Semiconductor and Storage	244	-	询价单	数据表	U-MOSVIII-H	3-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	4V, 10V	36mOhm @ 4A, 10V	Surface Mount	2.5V @ 100µA	9.3 nC @ 10 V	60 V	±20V	550 pF @ 10 V	-	-	UFM	-	1.8W (Ta)	175°C
SSM3K341R,LF MOSFET N-CH 60V 6A SOT-23F Toshiba Semiconductor and Storage	57	-	询价单	数据表	U-MOSVIII-H	SOT-23-3 Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	4V, 10V	36mOhm @ 5A, 10V	Surface Mount	2.5V @ 100µA	9.3 nC @ 10 V	60 V	±20V	550 pF @ 10 V	-	-	SOT-23F	-	1.2W (Ta)	-55°C ~ 175°C (TJ)

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