Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 30

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPH1R204PL,L1Q MOSFET N-CH 40V 150A 8SOP Toshiba Semiconductor and Storage	4,414	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	4.5V, 10V	1.24mOhm @ 50A, 10V	Surface Mount	2.4V @ 500µA	74 nC @ 10 V	40 V	±20V	7200 pF @ 20 V	-	-	8-SOP Advance (5x5)	-	960mW (Ta), 132W (Tc)	175°C (TJ)
TJ80S04M3L,LXHQ MOSFET P-CH 40V 80A DPAK Toshiba Semiconductor and Storage	5,473	-	询价单	数据表	U-MOSVI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	80A (Ta)	6V, 10V	5.2mOhm @ 40A, 10V	Surface Mount	3V @ 1mA	158 nC @ 10 V	40 V	+10V, -20V	7770 pF @ 10 V	-	-	DPAK+	-	100W (Tc)	175°C
TK55S10N1,LXHQ MOSFET N-CH 100V 55A DPAK Toshiba Semiconductor and Storage	8,842	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	55A (Ta)	10V	6.5mOhm @ 27.5A, 10V	Surface Mount	4V @ 500µA	49 nC @ 10 V	100 V	±20V	3280 pF @ 10 V	-	-	DPAK+	-	157W (Tc)	175°C
TK7P65W,RQ MOSFET N-CH 650V 6.8A DPAK Toshiba Semiconductor and Storage	908	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6.8A (Ta)	10V	800mOhm @ 3.4A, 10V	Surface Mount	3.5V @ 250µA	15 nC @ 10 V	650 V	±30V	490 pF @ 300 V	-	-	DPAK	-	60W (Tc)	150°C (TJ)
TK14G65W5,RQ MOSFET N-CH 650V 13.7A D2PAK Toshiba Semiconductor and Storage	5,112	-	询价单	数据表	DTMOSIV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13.7A (Ta)	10V	300mOhm @ 6.9A, 10V	Surface Mount	4.5V @ 690µA	40 nC @ 10 V	650 V	±30V	1300 pF @ 300 V	-	-	D2PAK	-	130W (Tc)	150°C (TJ)
TK16V60W,LVQ MOSFET N-CH 600V 15.8A 4DFN Toshiba Semiconductor and Storage	7,336	-	询价单	数据表	DTMOSIV	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Surface Mount	3.7V @ 790µA	38 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	139W (Tc)	150°C (TJ)
TK10V60W,LVQ MOSFET N-CH 600V 9.7A 4DFN Toshiba Semiconductor and Storage	2,346	-	询价单	数据表	DTMOSIV	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	Surface Mount	3.7V @ 500µA	20 nC @ 10 V	600 V	±30V	700 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	88.3W (Tc)	150°C (TJ)
TK155U65Z,RQ DTMOS VI TOLL PD=150W F=1MHZ Toshiba Semiconductor and Storage	4,768	-	询价单	数据表	DTMOSVI	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	10V	155mOhm @ 9A, 10V	Surface Mount	4V @ 730µA	29 nC @ 10 V	650 V	±30V	1635 pF @ 300 V	-	-	TOLL	-	150W (Tc)	150°C
TK25A60X5,S5X MOSFET N-CH 600V 25A TO220SIS Toshiba Semiconductor and Storage	1	-	询价单	数据表	DTMOSIV-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	10V	140mOhm @ 7.5A, 10V	Through Hole	4.5V @ 1.2mA	60 nC @ 10 V	600 V	±30V	2400 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK20V60W,LVQ MOSFET N-CH 600V 20A 4DFN Toshiba Semiconductor and Storage	4,482	-	询价单	数据表	DTMOSIV	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	170mOhm @ 10A, 10V	Surface Mount	3.7V @ 1mA	48 nC @ 10 V	600 V	±30V	1680 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	156W (Tc)	150°C (TJ)

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