Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 29

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
2SK3313(Q) MOSFET N-CH 500V 12A TO220NIS Toshiba Semiconductor and Storage	9,521	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	10V	620mOhm @ 6A, 10V	Through Hole	4V @ 1mA	45 nC @ 10 V	500 V	±30V	2040 pF @ 10 V	-	-	TO-220NIS	-	40W (Tc)	150°C (TJ)
TPC8132,LQ(S MOSFET P-CH 40V 7A 8SOP Toshiba Semiconductor and Storage	2,500	-	询价单	数据表	U-MOSVI	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	7A (Ta)	4.5V, 10V	25mOhm @ 3.5A, 10V	Surface Mount	2V @ 200µA	34 nC @ 10 V	40 V	+20V, -25V	1580 pF @ 10 V	-	-	8-SOP	-	1W (Ta)	150°C (TJ)
TK7S10N1Z,LXHQ MOSFET N-CH 100V 7A DPAK Toshiba Semiconductor and Storage	2,900	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	48mOhm @ 3.5A, 10V	Surface Mount	4V @ 100µA	7.1 nC @ 10 V	100 V	±20V	470 pF @ 10 V	-	-	DPAK+	-	50W (Tc)	175°C
TPN30008NH,LQ MOSFET N-CH 80V 9.6A 8TSON Toshiba Semiconductor and Storage	2,735	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.6A (Tc)	10V	30mOhm @ 4.8A, 10V	Surface Mount	4V @ 100µA	11 nC @ 10 V	80 V	±20V	920 pF @ 40 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 27W (Tc)	150°C (TJ)
SSM6K819R,LXHF AUTO AEC-Q SS MOS N-CH LOGIC-LEV Toshiba Semiconductor and Storage	5,548	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	4.5V, 10V	25.8mOhm @ 4A, 10V	Surface Mount	2.5V @ 100µA	8.5 nC @ 4.5 V	100 V	±20V	1110 pF @ 15 V	AEC-Q101	-	6-TSOP-F	Automotive	1.5W (Ta)	175°C
TPH3R203NL,L1Q MOSFET N-CH 30V 47A 8SOP Toshiba Semiconductor and Storage	4,990	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	4.5V, 10V	3.2mOhm @ 23.5A, 10V	Surface Mount	2.3V @ 300µA	21 nC @ 10 V	30 V	±20V	2100 pF @ 15 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 44W (Tc)	150°C (TJ)
TK12V60W,LVQ MOSFET N-CH 600V 11.5A 4DFN Toshiba Semiconductor and Storage	6,193	-	询价单	数据表	DTMOSIV	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	Surface Mount	3.7V @ 600µA	25 nC @ 10 V	600 V	±30V	890 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	104W (Tc)	150°C (TJ)
TK8P60W,RVQ MOSFET N CH 600V 8A DPAK Toshiba Semiconductor and Storage	8,580	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Ta)	10V	500mOhm @ 4A, 10V	Surface Mount	3.7V @ 400µA	18.5 nC @ 10 V	600 V	±30V	570 pF @ 300 V	-	-	DPAK	-	80W (Tc)	150°C (TJ)
TK6P65W,RQ MOSFET N-CH 650V 5.8A DPAK Toshiba Semiconductor and Storage	2,008	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.8A (Ta)	10V	1.05Ohm @ 2.9A, 10V	Surface Mount	3.5V @ 180µA	11 nC @ 10 V	650 V	±30V	390 pF @ 300 V	-	-	DPAK	-	60W (Tc)	150°C (TJ)
TK33S10N1Z,LXHQ MOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage	3,964	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	33A (Ta)	10V	9.7mOhm @ 16.5A, 10V	Surface Mount	4V @ 500µA	28 nC @ 10 V	100 V	±20V	2050 pF @ 10 V	-	-	DPAK+	-	125W (Tc)	175°C

共 814 条记录«上一页 1... 25 26 27 282930 31 32...82 下一页»