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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SSM6J402TU,LF

SSM6J402TU,LF

MOSFET P-CH 30V 2A UF6

Toshiba Semiconductor and Storage

6,176 -
SSM6J402TU,LF

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2A (Ta) 4V, 10V 117mOhm @ 1A, 10V Surface Mount 2.6V @ 1mA 5.3 nC @ 10 V 30 V ±20V 280 pF @ 15 V - - UF6 - 500mW (Ta) 150°C
SSM6K407TU,LF

SSM6K407TU,LF

MOSFET N-CH 60V 2A UF6

Toshiba Semiconductor and Storage

2,926 -
SSM6K407TU,LF

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 4V, 10V 300mOhm @ 1A, 10V Surface Mount 2V @ 1mA 6 nC @ 10 V 60 V ±20V 150 pF @ 10 V - - UF6 - 500mW (Ta) 150°C
SSM6K516NU,LF

SSM6K516NU,LF

MOSFET N-CH 30V 6A 6UDFNB

Toshiba Semiconductor and Storage

5,845 -
SSM6K516NU,LF

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 46mOhm @ 4A, 10V Surface Mount 2.5V @ 100µA 2.5 nC @ 4.5 V 30 V +20V, -12V 280 pF @ 15 V - - 6-UDFNB (2x2) - 1.25W (Ta) 150°C
SSM6K518NU,LF

SSM6K518NU,LF

MOSFET N-CH 20V 6A 6UDFNB

Toshiba Semiconductor and Storage

5,838 -
SSM6K518NU,LF

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 1.5V, 4.5V 33mOhm @ 4A, 4.5V Surface Mount 1V @ 1mA 3.6 nC @ 4.5 V 20 V ±8V 410 pF @ 10 V - - 6-UDFNB (2x2) - 1.25W (Ta) 150°C
SSM6K406TU,LF

SSM6K406TU,LF

MOSFET N-CH 30V 4.4A UF6

Toshiba Semiconductor and Storage

5,856 -
SSM6K406TU,LF

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.4A (Ta) 4.5V, 10V 25mOhm @ 2A, 10V Surface Mount 2.5V @ 1mA 12.4 nC @ 10 V 30 V ±20V 490 pF @ 15 V - - UF6 - 500mW (Ta) 150°C
2SK1119(F)

2SK1119(F)

MOSFET N-CH 1000V 4A TO220AB

Toshiba Semiconductor and Storage

2,354 -
2SK1119(F)

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 3.8Ohm @ 2A, 10V Through Hole 3.5V @ 1mA 60 nC @ 10 V 1000 V ±20V 700 pF @ 25 V - - TO-220AB - 100W (Tc) 150°C (TJ)
SSM6K810R,LXHF

SSM6K810R,LXHF

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

Toshiba Semiconductor and Storage

4,930 -
SSM6K810R,LXHF

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V Surface Mount 2.5V @ 100µA 3.2 nC @ 4.5 V 100 V ±20V 430 pF @ 15 V AEC-Q101 - 6-TSOP-F Automotive 1.5W (Ta) 175°C
2SK2916(F)

2SK2916(F)

MOSFET N-CH 500V 14A TO3PIS

Toshiba Semiconductor and Storage

7,889 -
2SK2916(F)

数据表

- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 10V 400mOhm @ 7A, 10V Through Hole 4V @ 1mA 58 nC @ 10 V 500 V ±30V 2600 pF @ 10 V - - TO-3P(N)IS - 80W (Tc) 150°C (TJ)
TPH4R803PL,LQ

TPH4R803PL,LQ

MOSFET N-CH 30V 48A 8SOP

Toshiba Semiconductor and Storage

4,989 -
TPH4R803PL,LQ

数据表

U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 48A (Tc) 4.5V, 10V 4.8mOhm @ 24A, 10V Surface Mount 2.1V @ 200µA 22 nC @ 10 V 30 V ±20V 1975 pF @ 15 V - - 8-SOP Advance (5x5) - 830mW (Ta), 69W (Tc) 175°C
TPH11003NL,LQ

TPH11003NL,LQ

MOSFET N CH 30V 32A 8SOP

Toshiba Semiconductor and Storage

2,260 -
TPH11003NL,LQ

数据表

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32A (Ta) 4.5V, 10V 11mOhm @ 5.5A, 10V Surface Mount 2.3V @ 100µA 7.5 nC @ 10 V 30 V ±20V 660 pF @ 15 V - - 8-SOP Advance (5x5) - 1.6W (Ta), 21W (Tc) 150°C (TJ)
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