| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSM6J402TU,LFMOSFET P-CH 30V 2A UF6 Toshiba Semiconductor and Storage |
6,176 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | Surface Mount | 2.6V @ 1mA | 5.3 nC @ 10 V | 30 V | ±20V | 280 pF @ 15 V | - | - | UF6 | - | 500mW (Ta) | 150°C |
|
SSM6K407TU,LFMOSFET N-CH 60V 2A UF6 Toshiba Semiconductor and Storage |
2,926 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 4V, 10V | 300mOhm @ 1A, 10V | Surface Mount | 2V @ 1mA | 6 nC @ 10 V | 60 V | ±20V | 150 pF @ 10 V | - | - | UF6 | - | 500mW (Ta) | 150°C |
|
SSM6K516NU,LFMOSFET N-CH 30V 6A 6UDFNB Toshiba Semiconductor and Storage |
5,845 | - |
|
数据表 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Ta) | 4.5V, 10V | 46mOhm @ 4A, 10V | Surface Mount | 2.5V @ 100µA | 2.5 nC @ 4.5 V | 30 V | +20V, -12V | 280 pF @ 15 V | - | - | 6-UDFNB (2x2) | - | 1.25W (Ta) | 150°C |
|
SSM6K518NU,LFMOSFET N-CH 20V 6A 6UDFNB Toshiba Semiconductor and Storage |
5,838 | - |
|
数据表 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Ta) | 1.5V, 4.5V | 33mOhm @ 4A, 4.5V | Surface Mount | 1V @ 1mA | 3.6 nC @ 4.5 V | 20 V | ±8V | 410 pF @ 10 V | - | - | 6-UDFNB (2x2) | - | 1.25W (Ta) | 150°C |
|
SSM6K406TU,LFMOSFET N-CH 30V 4.4A UF6 Toshiba Semiconductor and Storage |
5,856 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4.4A (Ta) | 4.5V, 10V | 25mOhm @ 2A, 10V | Surface Mount | 2.5V @ 1mA | 12.4 nC @ 10 V | 30 V | ±20V | 490 pF @ 15 V | - | - | UF6 | - | 500mW (Ta) | 150°C |
|
2SK1119(F)MOSFET N-CH 1000V 4A TO220AB Toshiba Semiconductor and Storage |
2,354 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 3.8Ohm @ 2A, 10V | Through Hole | 3.5V @ 1mA | 60 nC @ 10 V | 1000 V | ±20V | 700 pF @ 25 V | - | - | TO-220AB | - | 100W (Tc) | 150°C (TJ) |
|
|
SSM6K810R,LXHFAUTO AEC-Q SS MOS N-CH LOGIC-LEV Toshiba Semiconductor and Storage |
4,930 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | Surface Mount | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 100 V | ±20V | 430 pF @ 15 V | AEC-Q101 | - | 6-TSOP-F | Automotive | 1.5W (Ta) | 175°C |
|
2SK2916(F)MOSFET N-CH 500V 14A TO3PIS Toshiba Semiconductor and Storage |
7,889 | - |
|
数据表 |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 10V | 400mOhm @ 7A, 10V | Through Hole | 4V @ 1mA | 58 nC @ 10 V | 500 V | ±30V | 2600 pF @ 10 V | - | - | TO-3P(N)IS | - | 80W (Tc) | 150°C (TJ) |
|
TPH4R803PL,LQMOSFET N-CH 30V 48A 8SOP Toshiba Semiconductor and Storage |
4,989 | - |
|
数据表 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 48A (Tc) | 4.5V, 10V | 4.8mOhm @ 24A, 10V | Surface Mount | 2.1V @ 200µA | 22 nC @ 10 V | 30 V | ±20V | 1975 pF @ 15 V | - | - | 8-SOP Advance (5x5) | - | 830mW (Ta), 69W (Tc) | 175°C |
|
TPH11003NL,LQMOSFET N CH 30V 32A 8SOP Toshiba Semiconductor and Storage |
2,260 | - |
|
数据表 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 32A (Ta) | 4.5V, 10V | 11mOhm @ 5.5A, 10V | Surface Mount | 2.3V @ 100µA | 7.5 nC @ 10 V | 30 V | ±20V | 660 pF @ 15 V | - | - | 8-SOP Advance (5x5) | - | 1.6W (Ta), 21W (Tc) | 150°C (TJ) |