Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 27

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TW015N120C,S1F G3 1200V SIC-MOSFET TO-247 15MO Toshiba Semiconductor and Storage	30	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	100A (Tc)	18V	20mOhm @ 50A, 18V	Through Hole	5V @ 11.7mA	158 nC @ 18 V	1200 V	+25V, -10V	6000 pF @ 800 V	-	-	TO-247	-	431W (Tc)	175°C
SSM3K37CT,L3F MOSFET N-CH 20V 200MA CST3 Toshiba Semiconductor and Storage	8,794	-	询价单	数据表	U-MOSIII	SC-101, SOT-883	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200mA (Ta)	1.5V, 4.5V	2.2Ohm @ 100mA, 4.5V	Surface Mount	1V @ 1mA	-	20 V	±10V	12 pF @ 10 V	-	-	CST3	-	100mW (Ta)	150°C (TJ)
SSM3K35CT,L3F MOSFET N-CH 20V 180MA CST3 Toshiba Semiconductor and Storage	32,987	-	询价单	数据表	-	SC-101, SOT-883	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	180mA (Ta)	1.2V, 4V	3Ohm @ 50mA, 4V	Surface Mount	1V @ 1mA	-	20 V	±10V	9.5 pF @ 3 V	-	-	CST3	-	100mW (Ta)	150°C
SSM3J35CT,L3F MOSFET P-CHANNEL 20V 100MA CST3 Toshiba Semiconductor and Storage	6,186	-	询价单	数据表	π-MOSVI	SC-101, SOT-883	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100mA (Ta)	1.2V, 4V	8Ohm @ 50mA, 4V	Surface Mount	1V @ 1mA	-	20 V	±10V	12.2 pF @ 3 V	-	-	CST3	-	100mW (Ta)	150°C
SSM3K7002KF,LXHF SMOS NCH I: 0.4A, V: 60V, P: 270 Toshiba Semiconductor and Storage	17,109	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	400mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	Surface Mount	2.1V @ 250µA	0.6 nC @ 4.5 V	60 V	±20V	40 pF @ 10 V	AEC-Q101	-	S-Mini	Automotive	270mW (Ta)	150°C
TK9P65W,RQ MOSFET N-CH 650V 9.3A DPAK Toshiba Semiconductor and Storage	9,832	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.3A (Ta)	10V	560mOhm @ 4.6A, 10V	Surface Mount	3.5V @ 350µA	20 nC @ 10 V	650 V	±30V	700 pF @ 300 V	-	-	DPAK	-	80W (Tc)	150°C (TJ)
TK65G10N1,RQ MOSFET N-CH 100V 65A D2PAK Toshiba Semiconductor and Storage	6,870	-	询价单	数据表	U-MOSVIII-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	65A (Ta)	10V	4.5mOhm @ 32.5A, 10V	Surface Mount	4V @ 1mA	81 nC @ 10 V	100 V	±20V	5400 pF @ 50 V	-	-	D2PAK	-	156W (Tc)	150°C (TJ)
SSM3J145TU,LF MOSFET P-CH 20V 3A UFM Toshiba Semiconductor and Storage	9,968	-	询价单	数据表	U-MOSVI	3-SMD, Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	3A (Ta)	1.5V, 4.5V	103mOhm @ 1A, 4.5V	Surface Mount	1V @ 1mA	4.6 nC @ 4.5 V	20 V	+6V, -8V	270 pF @ 10 V	-	-	UFM	-	500mW (Ta)	150°C
SSM6J50TU,LF MOSFET P-CH 20V 2.5A UF6 Toshiba Semiconductor and Storage	5,998	-	询价单	数据表	U-MOSIV	6-SMD, Flat Leads	Tape & Reel (TR)	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	2.5A (Ta)	2V, 4.5V	64mOhm @ 1.5A, 4.5V	Surface Mount	1.2V @ 200µA	-	20 V	±10V	800 pF @ 10 V	-	-	UF6	-	500mW (Ta)	150°C
SSM3J371R,LXHF SMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage	12,597	-	询价单	数据表	U-MOSVI	SOT-23-3 Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	1.5V, 4.5V	55mOhm @ 3A, 4.5V	Surface Mount	1V @ 1mA	10.4 nC @ 4.5 V	20 V	+6V, -8V	630 pF @ 10 V	AEC-Q101	-	SOT-23F	Automotive	1W (Ta)	150°C

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