Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 26

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK20A25D,S5Q(M MOSFET N-CH 250V 20A TO220SIS Toshiba Semiconductor and Storage	9,533	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	100mOhm @ 10A, 10V	Through Hole	3.5V @ 1mA	55 nC @ 10 V	250 V	±20V	2550 pF @ 100 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK110U65Z,RQ DTMOS VI TOLL PD=190W F=1MHZ Toshiba Semiconductor and Storage	5,960	-	询价单	数据表	DTMOSVI	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta)	10V	110mOhm @ 12A, 10V	Surface Mount	4V @ 1.02mA	40 nC @ 10 V	650 V	±30V	2250 pF @ 300 V	-	-	TOLL	-	190W (Tc)	150°C
TKR74F04PB,LXGQ MOSFET N-CH 40V 250A TO220SM Toshiba Semiconductor and Storage	4,284	-	询价单	数据表	U-MOSIX-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	250A (Ta)	6V, 10V	0.74mOhm @ 125A, 10V	Surface Mount	3V @ 1mA	227 nC @ 10 V	40 V	±20V	14200 pF @ 10 V	-	-	TO-220SM(W)	-	375W (Tc)	175°C
TK16A60W,S4X MOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage	9,160	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Through Hole	3.7V @ 790µA	40 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	-
TK125V65Z,LQ MOSFET N-CH 650V 24A 5DFN Toshiba Semiconductor and Storage	10,000	-	询价单	数据表	DTMOSVI	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta)	10V	125mOhm @ 12A, 10V	Surface Mount	4V @ 1.02mA	40 nC @ 10 V	650 V	±30V	2250 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	190W (Tc)	150°C
TK099V65Z,LQ MOSFET N-CH 650V 30A 5DFN Toshiba Semiconductor and Storage	12,407	-	询价单	数据表	DTMOSVI	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	10V	99mOhm @ 15A, 10V	Surface Mount	4V @ 1.27mA	47 nC @ 10 V	650 V	±30V	2780 pF @ 300 V	-	-	5-DFN (8x8)	-	230W (Tc)	150°C
TK25V60X,LQ MOSFET N-CH 600V 25A 4DFN Toshiba Semiconductor and Storage	7,330	-	询价单	数据表	DTMOSIV-H	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	10V	135mOhm @ 7.5A, 10V	Surface Mount	3.5V @ 1.2mA	40 nC @ 10 V	600 V	±30V	2400 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	180W (Tc)	150°C
TPH1110ENH,L1Q MOSFET N-CH 200V 7.2A 8SOP Toshiba Semiconductor and Storage	4,819	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7.2A (Ta)	10V	114mOhm @ 3.6A, 10V	Surface Mount	4V @ 200µA	7 nC @ 10 V	200 V	±20V	600 pF @ 100 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 42W (Tc)	150°C (TJ)
TPCA8028-H(TE12LQM MOSFET N-CH 30V 50A 8SOP Toshiba Semiconductor and Storage	3,888	-	询价单	数据表	U-MOSIV-H	8-PowerVDFN	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Ta)	4.5V, 10V	2.8mOhm @ 25A, 10V	Surface Mount	2.3V @ 1mA	88 nC @ 10 V	30 V	±20V	7800 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C (TJ)
2SK3403(Q) MOSFET N-CH 450V 13A TO220FL Toshiba Semiconductor and Storage	9,292	-	询价单	数据表	-	TO-220-3, Short Tab	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	10V	400mOhm @ 6A, 10V	Through Hole	5V @ 1mA	34 nC @ 10 V	450 V	±30V	1600 pF @ 25 V	-	-	TO-220FL	-	100W (Tc)	150°C (TJ)

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