Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 25

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK190E65Z,S1X 650V DTMOS VI TO-220 190MOHM Toshiba Semiconductor and Storage	113	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	10V	190mOhm @ 7.5A, 10V	Through Hole	4V @ 610µA	25 nC @ 10 V	650 V	±30V	1370 pF @ 300 V	-	-	TO-220	-	130W (Tc)	150°C
TPCA8010-H(TE12L,Q MOSFET N-CH 200V 5.5A 8SOP Toshiba Semiconductor and Storage	5,244	-	询价单	数据表	π-MOSV	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Ta)	10V	450mOhm @ 2.7A, 10V	Surface Mount	4V @ 1mA	10 nC @ 10 V	200 V	±20V	600 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C (TJ)
TK14A65W5,S5X MOSFET N-CH 650V 13.7A TO220SIS Toshiba Semiconductor and Storage	2,110	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13.7A (Ta)	10V	300mOhm @ 6.9A, 10V	Through Hole	4.5V @ 690µA	40 nC @ 10 V	650 V	±30V	1300 pF @ 300 V	-	-	TO-220SIS	-	40W (Tc)	150°C (TJ)
TK190U65Z,RQ DTMOS VI TOLL PD=130W F=1MHZ Toshiba Semiconductor and Storage	1,022	-	询价单	数据表	DTMOSVI	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	10V	190mOhm @ 7.5A, 10V	Surface Mount	4V @ 610µA	25 nC @ 10 V	650 V	±30V	1370 pF @ 300 V	-	-	TOLL	-	130W (Tc)	150°C
TPC8109(TE12L) MOSFET P-CH 30V 10A 8-SOP Toshiba Semiconductor and Storage	6,917	-	询价单	数据表	-	8-SOIC (0.173", 4.40mm Width)	Cut Tape (CT)	Obsolete	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	-	20mOhm @ 5A, 10V	Surface Mount	2V @ 1mA	45 nC @ 10 V	30 V	-	2260 pF @ 10 V	-	-	8-SOP (5.5x6.0)	-	-	-
TK200F04N1L,LXGQ MOSFET N-CH 40V 200A TO220SM Toshiba Semiconductor and Storage	1,016	-	询价单	数据表	U-MOSVIII-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200A (Ta)	6V, 10V	0.9mOhm @ 100A, 10V	Surface Mount	3V @ 1mA	214 nC @ 10 V	40 V	±20V	14920 pF @ 10 V	-	-	TO-220SM(W)	-	375W (Tc)	175°C
TK160F10N1L,LXGQ MOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage	5,719	-	询价单	数据表	U-MOSVIII-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Ta)	6V, 10V	2.4mOhm @ 80A, 10V	Surface Mount	3.5V @ 1mA	122 nC @ 10 V	100 V	±20V	10100 pF @ 10 V	-	-	TO-220SM(W)	-	375W (Tc)	175°C
XK1R9F10QB,LXGQ MOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage	4,329	-	询价单	数据表	U-MOSX-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Ta)	6V, 10V	1.92mOhm @ 80A, 10V	Surface Mount	3.5V @ 1mA	184 nC @ 10 V	100 V	±20V	11500 pF @ 10 V	-	-	TO-220SM(W)	-	375W (Tc)	175°C
TK2R4E08QM,S1X UMOS10 TO-220AB 80V 2.4MOHM Toshiba Semiconductor and Storage	7,517	-	询价单	数据表	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	6V, 10V	2.44mOhm @ 50A, 10V	Through Hole	3.5V @ 2.2mA	178 nC @ 10 V	80 V	±20V	13000 pF @ 40 V	-	-	TO-220	-	300W (Tc)	175°C
TK22A65X5,S5X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	150	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Ta)	10V	160mOhm @ 11A, 10V	Through Hole	4.5V @ 1.1mA	50 nC @ 10 V	650 V	±30V	2400 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C

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