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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK56A12N1,S4XMOSFET N-CH 120V 56A TO220SIS Toshiba Semiconductor and Storage |
118 | - |
|
数据表 |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 7.5mOhm @ 28A, 10V | Through Hole | 4V @ 1mA | 69 nC @ 10 V | 120 V | ±20V | 4200 pF @ 60 V | - | - | TO-220SIS | - | 45W (Tc) | 150°C (TJ) |
|
XPH2R106NC,L1XHQMOSFET N-CH 60V 110A 8SOP Toshiba Semiconductor and Storage |
8,694 | - |
|
数据表 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Ta) | - | 2.1mOhm @ 55A, 10V | Surface Mount | 2.5V @ 1mA | 104 nC @ 10 V | 60 V | ±20V | 6900 pF @ 10 V | AEC-Q101 | - | 8-SOP Advance (5x5) | Automotive | 960mW (Ta), 170W (Tc) | 175°C |
|
TK90S06N1L,LQMOSFET N-CH 60V 90A TO252-3 Toshiba Semiconductor and Storage |
349 | - |
|
数据表 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 90A (Ta) | 4.5V, 10V | 3.3mOhm @ 45A, 10V | Surface Mount | 2.5V @ 500µA | 81 nC @ 10 V | 60 V | ±20V | 5400 pF @ 10 V | - | - | DPAK+ | - | 157W (Tc) | 175°C (TJ) |
|
XPW4R10ANB,L1XHQMOSFET N-CH 100V 70A AEC-Q101 Toshiba Semiconductor and Storage |
15,374 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 70A | 6V, 10V | 4.1mOhm @ 35A, 10V | Surface Mount | 3.5V @ 1mA | 75 nC @ 10 V | 100 V | ±20V | 4970 pF @ 10 V | AEC-Q101 | - | 8-DSOP Advance | Automotive | 170W (Tc) | -55°C ~ 175°C |
|
TK14A45D(STA4,Q,M)MOSFET N-CH 450V 14A TO220SIS Toshiba Semiconductor and Storage |
8,724 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 14A | - | 340mOhm @ 7A, 10V | Through Hole | - | - | 450 V | - | - | - | - | TO-220SIS | - | - | - |
|
TPW4R008NH,L1QMOSFET N-CH 80V 116A 8DSOP Toshiba Semiconductor and Storage |
4,550 | - |
|
数据表 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 116A (Tc) | 10V | 4mOhm @ 50A, 10V | Surface Mount | 4V @ 1mA | 59 nC @ 10 V | 80 V | ±20V | 5300 pF @ 40 V | - | - | 8-DSOP Advance | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) |
|
|
TK100S04N1L,LQMOSFET N-CH 40V 100A DPAK Toshiba Semiconductor and Storage |
2,842 | - |
|
数据表 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Ta) | 4.5V, 10V | 2.3mOhm @ 50A, 10V | Surface Mount | 2.5V @ 500µA | 76 nC @ 10 V | 40 V | ±20V | 5490 pF @ 10 V | - | - | DPAK+ | - | 100W (Tc) | 175°C (TJ) |
|
TK65E10N1,S1XMOSFET N CH 100V 148A TO220 Toshiba Semiconductor and Storage |
1,061 | - |
|
数据表 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 148A (Ta) | 10V | 4.8mOhm @ 32.5A, 10V | Through Hole | 4V @ 1mA | 81 nC @ 10 V | 100 V | ±20V | 5400 pF @ 50 V | - | - | TO-220 | - | 192W (Tc) | 150°C (TJ) |
|
TK10P60W,RVQMOSFET N CH 600V 9.7A DPAK Toshiba Semiconductor and Storage |
2,496 | - |
|
数据表 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | Surface Mount | 3.7V @ 500µA | 20 nC @ 10 V | 600 V | ±30V | 700 pF @ 300 V | - | - | DPAK | - | 80W (Tc) | 150°C (TJ) |
|
TPH4R008NH,L1QMOSFET N-CH 80V 60A 8SOP Toshiba Semiconductor and Storage |
12,067 | - |
|
数据表 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 4mOhm @ 30A, 10V | Surface Mount | 4V @ 1mA | 59 nC @ 10 V | 80 V | ±20V | 5300 pF @ 40 V | - | - | 8-SOP Advance (5x5) | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) |
