Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 23

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPH8R80ANH,L1Q MOSFET N CH 100V 32A 8-SOP Toshiba Semiconductor and Storage	29,285	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	32A (Tc)	10V	8.8mOhm @ 16A, 10V	Surface Mount	4V @ 500µA	33 nC @ 10 V	100 V	±20V	2800 pF @ 50 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 61W (Tc)	150°C (TJ)
XPH6R30ANB,L1XHQ MOSFET N-CH 100V 45A 8SOP Toshiba Semiconductor and Storage	8,918	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	45A (Ta)	6V, 10V	6.3mOhm @ 22.5A, 10V	Surface Mount	3.5V @ 500µA	52 nC @ 10 V	100 V	±20V	3240 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	960mW (Ta), 132W (Tc)	175°C
TK10A50W,S5X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	118	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	Through Hole	3.7V @ 500µA	20 nC @ 10 V	500 V	±30V	700 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	150°C
TK1R4S04PB,LXHQ MOSFET N-CH 40V 120A DPAK Toshiba Semiconductor and Storage	4,738	-	询价单	数据表	U-MOSIX-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Ta)	6V, 10V	1.9mOhm @ 60A, 6V	Surface Mount	3V @ 500µA	103 nC @ 10 V	40 V	±20V	5500 pF @ 10 V	-	-	DPAK+	-	180W (Tc)	175°C
TK290P65Y,RQ MOSFET N-CH 650V 11.5A DPAK Toshiba Semiconductor and Storage	3,976	-	询价单	数据表	DTMOSV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Tc)	10V	290mOhm @ 5.8A, 10V	Surface Mount	4V @ 450µA	25 nC @ 10 V	650 V	±30V	730 pF @ 300 V	-	-	DPAK	-	100W (Tc)	150°C (TJ)
TPCA8052-H(T2L1,VM MOSFET N-CH 40V 20A 8SOP Toshiba Semiconductor and Storage	8,771	-	询价单	数据表	U-MOSVI-H	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	4.5V, 10V	11.3mOhm @ 10A, 10V	Surface Mount	2.3V @ 200µA	25 nC @ 10 V	40 V	±20V	2110 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 30W (Tc)	150°C
XPW6R30ANB,L1XHQ MOSFET N-CH 100V 45A 8DSOP Toshiba Semiconductor and Storage	5,290	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	45A (Ta)	6V, 10V	6.3mOhm @ 22.5A, 10V	Surface Mount	3.5V @ 500µA	52 nC @ 10 V	100 V	±20V	3240 pF @ 10 V	-	-	8-DSOP Advance	-	960mW (Ta), 132W (Tc)	175°C
TK14A45DA(STA4,QM) MOSFET N-CH 450V 13.5A TO220SIS Toshiba Semiconductor and Storage	2,085	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	13.5A	-	410mOhm @ 6.8A, 10V	Through Hole	-	-	450 V	-	-	-	-	TO-220SIS	-	-	-
TPH1R005PL,L1Q MOSFET N-CH 45V 150A 8SOP Toshiba Semiconductor and Storage	7,777	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	4.5V, 10V	1.04mOhm @ 50A, 10V	Surface Mount	2.4V @ 1mA	99 nC @ 10 V	45 V	±20V	9600 pF @ 22.5 V	-	-	8-SOP Advance (5x5)	-	960mW (Ta), 170W (Tc)	175°C (TJ)
TPN4R203NC,L1Q MOSFET N CH 30V 23A 8TSON-ADV Toshiba Semiconductor and Storage	8,862	-	询价单	数据表	U-MOSVIII	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	23A (Ta)	4.5V, 10V	4.2mOhm @ 11.5A, 10V	Surface Mount	2.3V @ 200µA	24 nC @ 10 V	30 V	±20V	1370 pF @ 15 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 22W (Tc)	150°C (TJ)

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