Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 21

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPCA8051-H(T2L1,VM MOSFET N-CH 80V 28A 8SOP Toshiba Semiconductor and Storage	7,969	-	询价单	数据表	U-MOSVI-H	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Ta)	4.5V, 10V	9.4mOhm @ 14A, 10V	Surface Mount	2.3V @ 1mA	91 nC @ 10 V	80 V	±20V	7540 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C (TJ)
TPH7R506NH,L1Q MOSFET N-CH 60V 22A 8SOP Toshiba Semiconductor and Storage	25,501	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	22A (Ta)	10V	7.5mOhm @ 11A, 10V	Surface Mount	4V @ 300µA	31 nC @ 10 V	60 V	±20V	2320 pF @ 30 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C (TJ)
TK7S10N1Z,LQ MOSFET N-CH 100V 7A DPAK Toshiba Semiconductor and Storage	6,884	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	48mOhm @ 3.5A, 10V	Surface Mount	4V @ 100µA	7.1 nC @ 10 V	100 V	±20V	470 pF @ 10 V	-	-	DPAK+	-	50W (Tc)	175°C (TJ)
TK4R3E06PL,S1X MOSFET N-CH 60V 80A TO220 Toshiba Semiconductor and Storage	109	-	询价单	数据表	U-MOSIX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	7.2mOhm @ 15A, 4.5V	Through Hole	2.5V @ 500µA	48.2 nC @ 10 V	60 V	±20V	3280 pF @ 30 V	-	-	TO-220	-	87W (Tc)	175°C (TJ)
TPH4R50ANH1,LQ MOSFET 100V 4.5MOHM SOP-ADV(N) Toshiba Semiconductor and Storage	6,077	-	询价单	数据表	U-MOSVIII-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	92A (Tc)	10V	4.5mOhm @ 46A, 10V	Surface Mount	4V @ 1mA	58 nC @ 10 V	100 V	±20V	5200 pF @ 50 V	-	-	8-SOP Advance (5x5.75)	-	800mW (Ta)	150°C
SSM3K56CT,L3F MOSFET N-CH 20V 800MA CST3 Toshiba Semiconductor and Storage	14,906	-	询价单	数据表	U-MOSVII-H	SC-101, SOT-883	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	800mA (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	Surface Mount	1V @ 1mA	1 nC @ 4.5 V	20 V	±8V	55 pF @ 10 V	-	-	CST3	-	500mW (Ta)	150°C (TA)
TPH2010FNH,L1Q MOSFET N-CH 250V 5.6A 8SOP Toshiba Semiconductor and Storage	8,813	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.6A (Ta)	10V	198mOhm @ 2.8A, 10V	Surface Mount	4V @ 200µA	7 nC @ 10 V	250 V	±20V	600 pF @ 100 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 42W (Tc)	150°C (TJ)
TK15S04N1L,LQ MOSFET N-CH 40V 15A DPAK Toshiba Semiconductor and Storage	1,595	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	4.5V, 10V	17.8mOhm @ 7.5A, 10V	Surface Mount	2.5V @ 100µA	10 nC @ 10 V	40 V	±20V	610 pF @ 10 V	-	-	DPAK+	-	46W (Tc)	175°C (TJ)
TK380P60Y,RQ MOSFET N-CHANNEL 600V 9.7A DPAK Toshiba Semiconductor and Storage	4,000	-	询价单	数据表	DTMOSV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Tc)	10V	380mOhm @ 4.9A, 10V	Surface Mount	4V @ 360µA	20 nC @ 10 V	600 V	±30V	590 pF @ 300 V	-	-	DPAK	-	30W (Tc)	150°C (TJ)
TK90S06N1L,LXHQ MOSFET N-CH 60V 90A DPAK Toshiba Semiconductor and Storage	9,310	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Ta)	4.5V, 10V	3.3mOhm @ 45A, 10V	Surface Mount	2.5V @ 500µA	81 nC @ 10 V	60 V	±20V	5400 pF @ 10 V	-	-	DPAK+	-	157W (Tc)	175°C

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