Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 20

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
XPN7R104NC,L1XHQ MOSFET N-CH 40V 20A 8TSON Toshiba Semiconductor and Storage	11,107	-	询价单	数据表	U-MOSIII	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	4.5V, 10V	7.1mOhm @ 10A, 10V	Surface Mount	2.5V @ 200µA	21 nC @ 10 V	40 V	±20V	1290 pF @ 10 V	-	-	8-TSON Advance-WF (3.1x3.1)	-	840mW (Ta), 65W (Tc)	175°C
XPN3R804NC,L1XHQ MOSFET N-CH 40V 40A 8TSON Toshiba Semiconductor and Storage	14,885	-	询价单	数据表	U-MOSVIII	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	4.5V, 10V	3.8mOhm @ 20A, 10V	Surface Mount	2.5V @ 300µA	35 nC @ 10 V	40 V	±20V	2230 pF @ 10 V	-	-	8-TSON Advance-WF (3.1x3.1)	-	840mW (Ta), 100W (Tc)	175°C
TK33S10N1L,LXHQ MOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage	3,536	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	33A (Ta)	4.5V, 10V	9.7mOhm @ 16.5A, 10V	Surface Mount	2.5V @ 500µA	33 nC @ 10 V	100 V	±20V	2250 pF @ 10 V	-	-	DPAK+	-	125W (Tc)	175°C
2SJ380(F) MOSFET P-CH 100V 12A TO220NIS Toshiba Semiconductor and Storage	8,145	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	12A (Ta)	4V, 10V	210mOhm @ 6A, 10V	Through Hole	2V @ 1mA	48 nC @ 10 V	100 V	±20V	1100 pF @ 10 V	-	-	TO-220NIS	-	35W (Tc)	150°C (TJ)
TPN5900CNH,L1Q MOSFET N-CH 150V 9A 8TSON Toshiba Semiconductor and Storage	4,036	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	10V	59mOhm @ 4.5A, 10V	Surface Mount	4V @ 200µA	7 nC @ 10 V	150 V	±20V	600 pF @ 75 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 39W (Tc)	150°C (TJ)
TK560P65Y,RQ MOSFET N-CHANNEL 650V 7A DPAK Toshiba Semiconductor and Storage	3,844	-	询价单	数据表	DTMOSV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	560mOhm @ 3.5A, 10V	Surface Mount	4V @ 240µA	14.5 nC @ 10 V	650 V	±30V	380 pF @ 300 V	-	-	DPAK	-	60W (Tc)	150°C (TJ)
2SK1828TE85LF MOSFET N-CH 20V 50MA SC59 Toshiba Semiconductor and Storage	1,367	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50mA (Ta)	2.5V	40Ohm @ 10mA, 2.5V	Surface Mount	1.5V @ 100µA	-	20 V	10V	5.5 pF @ 3 V	-	-	SC-59	-	200mW (Ta)	150°C (TJ)
XPN6R706NC,L1XHQ MOSFET N-CH 60V 40A 8TSON Toshiba Semiconductor and Storage	27,960	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	4.5V, 10V	6.7mOhm @ 20A, 10V	Surface Mount	2.5V @ 300µA	35 nC @ 10 V	60 V	±20V	2000 pF @ 10 V	-	-	8-TSON Advance-WF (3.1x3.1)	-	840mW (Ta), 100W (Tc)	175°C
TK5R1P08QM,RQ UMOS10 DPAK 80V 5.1MOHM Toshiba Semiconductor and Storage	15,659	-	询价单	数据表	U-MOSX-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	84A (Tc)	6V, 10V	5.1mOhm @ 42A, 10V	Surface Mount	3.5V @ 700µA	56 nC @ 10 V	80 V	±20V	3980 pF @ 40 V	-	-	DPAK	-	104W (Tc)	175°C
TK560P60Y,RQ MOSFET N-CHANNEL 600V 7A DPAK Toshiba Semiconductor and Storage	5,542	-	询价单	数据表	DTMOSV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	560mOhm @ 3.5A, 10V	Surface Mount	4V @ 240µA	14.5 nC @ 10 V	600 V	±30V	380 pF @ 300 V	-	-	DPAK	-	60W (Tc)	150°C (TJ)

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