Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 19

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPN13008NH,L1Q MOSFET N-CH 80V 18A 8TSON Toshiba Semiconductor and Storage	4,415	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	13.3mOhm @ 9A, 10V	Surface Mount	4V @ 200µA	18 nC @ 10 V	80 V	±20V	1600 pF @ 40 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 42W (Tc)	150°C (TJ)
TK40S06N1L,LXHQ MOSFET N-CH 60V 40A DPAK Toshiba Semiconductor and Storage	6,970	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	4.5V, 10V	18mOhm @ 20A, 10V	Surface Mount	2.5V @ 200µA	26 nC @ 10 V	60 V	±20V	1650 pF @ 10 V	-	-	DPAK+	-	88.2W (Tc)	175°C
TPH4R003NL,L1Q MOSFET N-CH 30V 40A 8SOP Toshiba Semiconductor and Storage	4,086	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	4mOhm @ 20A, 10V	Surface Mount	2.3V @ 200µA	14.8 nC @ 10 V	30 V	±20V	1400 pF @ 15 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 36W (Tc)	150°C (TJ)
2SK3662(F) MOSFET N-CH 60V 35A TO220NIS Toshiba Semiconductor and Storage	8,791	-	询价单	数据表	U-MOSIII	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Ta)	4V, 10V	12.5mOhm @ 18A, 10V	Through Hole	2.5V @ 1mA	91 nC @ 10 V	60 V	±20V	5120 pF @ 10 V	-	-	TO-220NIS	-	35W (Tc)	150°C (TJ)
TK10A60W,S4X MOSFET N-CH 600V 9.7A TO220 Toshiba Semiconductor and Storage	7,037	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	Through Hole	3.7V @ 500µA	20 nC @ 10 V	600 V	±30V	720 pF @ 300 V	-	-	TO-220SIS	-	30W (Tc)	-
TPH14006NH,L1Q MOSFET N CH 60V 14A 8-SOP ADV Toshiba Semiconductor and Storage	4,380	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Ta)	6.5V, 10V	14mOhm @ 7A, 10V	Surface Mount	4V @ 200µA	16 nC @ 10 V	60 V	±20V	1300 pF @ 30 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 32W (Tc)	150°C (TJ)
TPH2R104PL,LQ MOSFET N-CH 40V 100A 8SOP Toshiba Semiconductor and Storage	11,371	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	2.1mOhm @ 50A, 10V	Surface Mount	2.4V @ 500µA	78 nC @ 10 V	40 V	±20V	6230 pF @ 20 V	-	-	8-SOP Advance (5x5)	-	830mW (Ta), 116W (Tc)	175°C
2SJ377(TE16R1,NQ) MOSFET P-CH 60V 5A PW-MOLD Toshiba Semiconductor and Storage	8,063	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5A (Ta)	4V, 10V	190mOhm @ 2.5A, 10V	Surface Mount	2V @ 1mA	22 nC @ 10 V	60 V	±20V	630 pF @ 10 V	-	-	PW-MOLD	-	20W (Tc)	150°C (TJ)
XPN12006NC,L1XHQ MOSFET N-CH 60V 20A 8TSON Toshiba Semiconductor and Storage	9,542	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A	4.5V, 10V	12mOhm @ 10A, 10V	Surface Mount	2.5V @ 200µA	23 nC @ 10 V	60 V	±20V	1100 pF @ 10 V	AEC-Q101	-	8-TSON Advance-WF (3.1x3.1)	Automotive	65W (Tc)	-55°C ~ 175°C
TK65S04N1L,LXHQ MOSFET N-CH 40V 65A DPAK Toshiba Semiconductor and Storage	4,642	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	65A (Ta)	4.5V, 10V	4.3mOhm @ 32.5A, 10V	Surface Mount	2.5V @ 300µA	39 nC @ 10 V	40 V	±20V	2550 pF @ 10 V	-	-	DPAK+	-	107W (Tc)	175°C

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