Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 18

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TJ10S04M3L,LXHQ MOSFET P-CH 40V 10A DPAK Toshiba Semiconductor and Storage	3,780	-	询价单	数据表	U-MOSVI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	6V, 10V	44mOhm @ 5A, 10V	Surface Mount	3V @ 1mA	19 nC @ 10 V	40 V	+10V, -20V	930 pF @ 10 V	-	-	DPAK+	-	27W (Tc)	175°C
TK15S04N1L,LXHQ MOSFET N-CH 40V 15A DPAK Toshiba Semiconductor and Storage	1,922	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	4.5V, 10V	17.8mOhm @ 7.5A, 10V	Surface Mount	2.5V @ 100µA	10 nC @ 10 V	40 V	±20V	610 pF @ 10 V	-	-	DPAK+	-	46W (Tc)	175°C
2SK2883(TE24L,Q) MOSFET N-CH 800V 3A TO220SM Toshiba Semiconductor and Storage	3,102	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	10V	3.6Ohm @ 1.5A, 10V	Surface Mount	4V @ 1mA	25 nC @ 10 V	800 V	±30V	750 pF @ 25 V	-	-	TO-220SM	-	75W (Tc)	150°C (TJ)
TPN14006NH,L1Q MOSFET N CH 60V 13A 8TSON-ADV Toshiba Semiconductor and Storage	9,535	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	6.5V, 10V	14mOhm @ 6.5A, 10V	Surface Mount	4V @ 200µA	15 nC @ 10 V	60 V	±20V	1300 pF @ 30 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 30W (Tc)	150°C (TJ)
TPN7R006PL,L1Q MOSFET N-CH 60V 54A 8TSON Toshiba Semiconductor and Storage	9,946	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	4.5V, 10V	7mOhm @ 27A, 10V	Surface Mount	2.5V @ 200µA	20 nC @ 10 V	60 V	±20V	1875 pF @ 30 V	-	-	8-TSON Advance (3.1x3.1)	-	630mW (Ta), 75W (Tc)	175°C
TPN3300ANH,LQ MOSFET N-CH 100V 9.4A 8TSON Toshiba Semiconductor and Storage	7,306	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.4A (Tc)	10V	33mOhm @ 4.7A, 10V	Surface Mount	4V @ 100µA	11 nC @ 10 V	100 V	±20V	880 pF @ 50 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 27W (Tc)	150°C (TJ)
TK11S10N1L,LXHQ MOSFET N-CH 100V 11A DPAK Toshiba Semiconductor and Storage	3,837	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	4.5V, 10V	28mOhm @ 5.5A, 10V	Surface Mount	2.5V @ 100µA	15 nC @ 10 V	100 V	±20V	850 pF @ 10 V	-	-	DPAK+	-	65W (Tc)	175°C
TPH3R704PC,LQ MOSFET N-CH 40V 82A 8SOP Toshiba Semiconductor and Storage	1,635	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	82A (Tc)	4.5V, 10V	3.7mOhm @ 41A, 10V	Surface Mount	2.4V @ 300µA	47 nC @ 10 V	40 V	±20V	3615 pF @ 20 V	-	-	8-SOP Advance (5x5)	-	830mW (Ta), 90W (Tc)	175°C
TPCA8045-H(T2L1,VM MOSFET N-CH 40V 46A 8SOP Toshiba Semiconductor and Storage	9,879	-	询价单	数据表	U-MOSVI-H	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	46A (Ta)	4.5V, 10V	3.6mOhm @ 23A, 10V	Surface Mount	2.3V @ 1mA	90 nC @ 10 V	40 V	±20V	7540 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C (TJ)
TPN7R506NH,L1Q MOSFET N-CH 60V 26A 8TSON Toshiba Semiconductor and Storage	11,620	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	26A (Tc)	6.5V, 10V	7.5mOhm @ 13A, 10V	Surface Mount	4V @ 200µA	22 nC @ 10 V	60 V	±20V	1800 pF @ 30 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 42W (Tc)	150°C (TJ)

共 814 条记录«上一页 1... 14 15 16 171819 20 21...82 下一页»