Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 17

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TW048Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 48 Toshiba Semiconductor and Storage	243	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40A (Tc)	18V	69mOhm @ 20A, 18V	Through Hole	5V @ 1.6mA	41 nC @ 18 V	650 V	+25V, -10V	1362 pF @ 400 V	-	-	TO-247-4L(X)	-	132W (Tc)	175°C
TW030Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 3 Toshiba Semiconductor and Storage	105	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	60A (Tc)	18V	41mOhm @ 30A, 18V	Through Hole	5V @ 13mA	82 nC @ 18 V	1200 V	+25V, -10V	2925 pF @ 800 V	-	-	TO-247-4L(X)	-	249W (Tc)	175°C
TW015Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 1 Toshiba Semiconductor and Storage	68	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	100A (Tc)	18V	21mOhm @ 50A, 18V	Through Hole	5V @ 11.7mA	158 nC @ 18 V	1200 V	+25V, -10V	6000 pF @ 800 V	-	-	TO-247-4L(X)	-	431W (Tc)	175°C
TPN2R503NC,L1Q MOSFET N CH 30V 40A 8TSON-ADV Toshiba Semiconductor and Storage	7,037	-	询价单	数据表	U-MOSVIII	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	4.5V, 10V	2.5mOhm @ 20A, 10V	Surface Mount	2.3V @ 500µA	40 nC @ 10 V	30 V	±20V	2230 pF @ 15 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 35W (Tc)	150°C (TJ)
TPN2R903PL,L1Q MOSFET N-CH 30V 70A 8TSON Toshiba Semiconductor and Storage	36,136	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	2.9mOhm @ 35A, 10V	Surface Mount	2.1V @ 200µA	26 nC @ 10 V	30 V	±20V	2300 pF @ 15 V	-	-	8-TSON Advance (3.1x3.1)	-	630mW (Ta), 75W (Tc)	175°C
TPH8R903NL,LQ MOSFET N CH 30V 20A 8SOP Toshiba Semiconductor and Storage	3,150	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	8.9mOhm @ 10A, 10V	Surface Mount	2.3V @ 1mA	9.8 nC @ 10 V	30 V	±20V	820 pF @ 15 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 24W (Tc)	150°C (TJ)
SSM10N954L,EFF COMMON-DRAIN NCH MOSFET, 12V, 13 Toshiba Semiconductor and Storage	9,865	-	询价单	数据表	-	10-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13.5A (Ta)	2.5V, 4.5V	2.75mOhm @ 6A, 4.5V	Surface Mount	1.4V @ 1.11mA	25 nC @ 4 V	12 V	±8V	-	-	-	TCSPAC-153001	-	800mW (Ta)	150°C
2SJ168TE85LF MOSFET P-CH 60V 200MA SC59 Toshiba Semiconductor and Storage	12,605	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	200mA (Ta)	10V	2Ohm @ 50mA, 10V	Surface Mount	-	-	60 V	±20V	85 pF @ 10 V	-	-	SC-59	-	200mW (Ta)	150°C (TJ)
TPN11006NL,LQ MOSFET N-CH 60V 17A 8TSON Toshiba Semiconductor and Storage	13,285	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4.5V, 10V	11.4mOhm @ 8.5A, 10V	Surface Mount	2.5V @ 200µA	23 nC @ 10 V	60 V	±20V	2000 pF @ 30 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 30W (Tc)	150°C (TJ)
TPN22006NH,LQ MOSFET N-CH 60V 9A 8TSON Toshiba Semiconductor and Storage	5,752	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	6.5V, 10V	22mOhm @ 4.5A, 10V	Surface Mount	4V @ 100µA	12 nC @ 10 V	60 V	±20V	710 pF @ 30 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 18W (Tc)	150°C (TJ)

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