Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 16

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPCC8005-H(TE12LQM MOSFET N-CH 30V 26A 8TSON Toshiba Semiconductor and Storage	4,056	-	询价单	数据表	U-MOSVI-H	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	26A (Ta)	4.5V, 10V	6.4mOhm @ 13A, 10V	Surface Mount	2.3V @ 500µA	35 nC @ 10 V	30 V	±20V	2900 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 30W (Tc)	150°C (TJ)
TK16G60W,RVQ MOSFET N CH 600V 15.8A D2PAK Toshiba Semiconductor and Storage	984	-	询价单	数据表	DTMOSIV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	Surface Mount	3.7V @ 790µA	38 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	D2PAK	-	130W (Tc)	150°C (TJ)
TK095N65Z5,S1F(S 650V DTMOS6-HIGH SPEED DIODE Toshiba Semiconductor and Storage	195	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Ta)	10V	95mOhm @ 14.5A, 10V	Through Hole	4.5V @ 1.27mA	50 nC @ 10 V	650 V	±30V	2880 pF @ 300 V	-	-	TO-247	-	230W (Tc)	150°C
TPCC8006-H(TE12LQM MOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage	8,322	-	询价单	数据表	U-MOSVI-H	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	22A (Ta)	4.5V, 10V	8mOhm @ 11A, 10V	Surface Mount	2.3V @ 200µA	27 nC @ 10 V	30 V	±20V	2200 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 27W (Tc)	150°C (TJ)
TPCC8A01-H(TE12LQM MOSFET N-CH 30V 21A 8TSON Toshiba Semiconductor and Storage	3,442	-	询价单	数据表	U-MOSV-H	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Ta)	4.5V, 10V	9.9mOhm @ 10.5A, 10V	Surface Mount	2.3V @ 1mA	20 nC @ 10 V	30 V	±20V	1900 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 30W (Tc)	150°C (TJ)
TK068N65Z5,S1F 650V DTMOS6-HSD TO-247 68MOHM Toshiba Semiconductor and Storage	235	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	37A (Ta)	10V	68mOhm @ 18.5A, 10V	Through Hole	4.5V @ 1.69mA	68 nC @ 10 V	650 V	±30V	3765 pF @ 300 V	-	-	TO-247	-	270W (Tc)	150°C
TK31V60W,LVQ MOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage	2,455	-	询价单	数据表	DTMOSIV	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	98mOhm @ 15.4A, 10V	Surface Mount	3.7V @ 1.5mA	86 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	240W (Tc)	150°C (TJ)
TPCC8001-H(TE12LQM MOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage	3,588	-	询价单	数据表	U-MOSV-H	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	22A (Ta)	4.5V, 10V	8.3mOhm @ 11A, 10V	Surface Mount	2.5V @ 1mA	27 nC @ 10 V	30 V	±20V	2500 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 30W (Tc)	150°C (TJ)
TPCC8002-H(TE12LQM MOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage	9,408	-	询价单	数据表	U-MOSV-H	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	22A (Ta)	4.5V, 10V	8.3mOhm @ 11A, 10V	Surface Mount	2.5V @ 1mA	27 nC @ 10 V	30 V	±20V	2500 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 30W (Tc)	150°C (TJ)
TPCC8002-H(TE12L,Q MOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage	6,876	-	询价单	数据表	U-MOSV-H	8-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	22A (Ta)	4.5V, 10V	8.3mOhm @ 11A, 10V	Surface Mount	2.5V @ 1mA	27 nC @ 10 V	30 V	±20V	2500 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 30W (Tc)	150°C (TJ)

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