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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK210V65Z,LQMOSFET N-CH 650V 15A 5DFN Toshiba Semiconductor and Storage |
4,630 | - |
|
数据表 |
DTMOSVI | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Ta) | 10V | 210mOhm @ 7.5A, 10V | Surface Mount | 4V @ 610µA | 25 nC @ 10 V | 650 V | ±30V | 1370 pF @ 300 V | - | - | 4-DFN-EP (8x8) | - | 130W (Tc) | 150°C |
|
TK7R2E15Q5,S1X150V UMOS10-HSD TO-220 7.2MOHM Toshiba Semiconductor and Storage |
400 | - |
|
数据表 |
U-MOSX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 130A (Ta), 84A (Tc) | 8V, 10V | 7.2mOhm @ 42A, 10V | Through Hole | 4.5V @ 1.4mA | 66 nC @ 10 V | 150 V | ±20V | 4970 pF @ 75 V | - | - | TO-220 | - | 230W (Tc) | 175°C |
|
|
2SK3798(STA4,Q,M)POWER MOSFET TRANSISTOR TO-220(S Toshiba Semiconductor and Storage |
2,046 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 3.5Ohm @ 2A, 10V | Through Hole | 4V @ 1mA | 26 nC @ 10 V | 900 V | ±30V | 800 pF @ 25 V | - | - | TO-220SIS | - | 40W (Tc) | 150°C |
|
|
TK16V60W5,LVQPB-F POWER MOSFET TRANSISTOR DTM Toshiba Semiconductor and Storage |
2,260 | - |
|
数据表 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15.8A (Ta) | 10V | 245mOhm @ 7.9A, 10V | Surface Mount | 4.5V @ 790µA | 43 nC @ 10 V | 600 V | ±30V | 1350 pF @ 300 V | - | - | 4-DFN-EP (8x8) | - | 139W (Tc) | 150°C |
|
|
TK14V65W,LQPB-F POWER MOSFET TRANSISTOR DTM Toshiba Semiconductor and Storage |
2,394 | - |
|
数据表 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13.7A (Ta) | 10V | 280mOhm @ 6.9A, 10V | Surface Mount | 3.5V @ 690µA | 35 nC @ 10 V | 650 V | ±30V | 1300 pF @ 300 V | - | - | 4-DFN-EP (8x8) | - | 139W (Tc) | 150°C |
|
|
TK5R0A15Q5,S4X150V UMOS10-HSD TO-220SIS 5MOHM Toshiba Semiconductor and Storage |
380 | - |
|
数据表 |
U-MOSX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 76A (Ta), 76A (Tc) | 8V, 10V | 5mOhm @ 38A, 10V | Through Hole | 4.5V @ 2.2mA | 96 nC @ 10 V | 150 V | ±20V | 7820 pF @ 75 V | - | - | TO-220SIS | - | 53W (Tc) | 175°C |
|
|
TK25V60X5,LQPB-F POWER MOSFET TRANSISTOR DTM Toshiba Semiconductor and Storage |
2,488 | - |
|
数据表 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Ta) | 10V | 150mOhm @ 7.5A, 10V | Surface Mount | 4.5V @ 1.2mA | 60 nC @ 10 V | 600 V | ±30V | 2400 pF @ 300 V | - | - | 4-DFN-EP (8x8) | - | 180W (Tc) | 150°C |
|
TK8A45DA(STA4,Q,M)MOSFET N-CH 450V 7.5A TO220SIS Toshiba Semiconductor and Storage |
5,706 | - |
|
数据表 |
π-MOSVII | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 7.5A (Tc) | - | - | Through Hole | - | - | 450 V | - | - | - | - | TO-220SIS | - | - | - |
|
|
TK22V65X5,LQPB-F POWER MOSFET TRANSISTOR DFN Toshiba Semiconductor and Storage |
2,500 | - |
|
数据表 |
DTMOSIV-H | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Ta) | 10V | 170mOhm @ 11A, 10V | Surface Mount | 4.5V @ 1.1mA | 50 nC @ 10 V | 650 V | ±30V | 2400 pF @ 300 V | - | - | 4-DFN-EP (8x8) | - | 180W (Tc) | 150°C |
|
TPCA8047-H(T2L1,VMMOSFET N-CH 40V 32A 8SOP Toshiba Semiconductor and Storage |
6,282 | - |
|
数据表 |
U-MOSVI-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 32A (Ta) | 4.5V, 10V | 7.3mOhm @ 16A, 10V | Surface Mount | 2.3V @ 500µA | 43 nC @ 10 V | 40 V | ±20V | 3365 pF @ 10 V | - | - | 8-SOP Advance (5x5) | - | 1.6W (Ta), 45W (Tc) | 150°C |
