Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 14

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK9R7A15Q5,S4X 150V UMOS10-HSD TO-220SIS 9.7MOH Toshiba Semiconductor and Storage	388	-	询价单	数据表	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	8V, 10V	9.7mOhm @ 24.5A, 10V	Through Hole	4.5V @ 1.1mA	50 nC @ 10 V	150 V	±20V	3690 pF @ 75 V	-	-	TO-220SIS	-	45W (Tc)	175°C
TK20G60W,RVQ MOSFET N CH 600V 20A D2PAK Toshiba Semiconductor and Storage	1,960	-	询价单	数据表	DTMOSIV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	155mOhm @ 10A, 10V	Surface Mount	3.7V @ 1mA	48 nC @ 10 V	600 V	±30V	1680 pF @ 300 V	-	-	D2PAK	-	165W (Tc)	150°C (TJ)
XPQ1R004PB,LXHQ 40V U-MOS IX-H L-TOGL 1.0MOHM Toshiba Semiconductor and Storage	4,500	-	询价单	数据表	U-MOSIX-H	8-PowerBSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200A (Ta)	6V, 10V	1mOhm @ 100A, 10V	Surface Mount	3V @ 500µA	84 nC @ 10 V	40 V	±20V	6890 pF @ 10 V	AEC-Q101	-	L-TOGL™	Automotive	230W (Tc)	175°C
TK9R6E15Q5,S1X 150V UMOS10-HSD TO-220 9.6MOHM Toshiba Semiconductor and Storage	380	-	询价单	数据表	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	104A (Ta), 52A (Tc)	8V, 10V	9.6mOhm @ 26A, 10V	Through Hole	4.5V @ 1.1mA	50 nC @ 10 V	150 V	±20V	3690 pF @ 75 V	-	-	TO-220	-	200W (Tc)	175°C
TPW5200FNH,L1Q PB-F POWER MOSFET TRANSISTOR DSO Toshiba Semiconductor and Storage	4,655	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	26A (Tc)	10V	52mOhm @ 13A, 10V	Surface Mount	4V @ 1mA	22 nC @ 10 V	250 V	±20V	2200 pF @ 100 V	-	-	8-DSOP Advance	-	800mW (Ta), 142W (Tc)	150°C
TK50P04M1(T6RSS-Q) MOSFET N-CH 40V 50A DP Toshiba Semiconductor and Storage	3,893	-	询价单	数据表	U-MOSVI-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Ta)	4.5V, 10V	8.7mOhm @ 25A, 10V	Surface Mount	2.3V @ 500µA	38 nC @ 10 V	40 V	±20V	2600 pF @ 10 V	-	-	DPAK	-	60W (Tc)	150°C (TJ)
TK13A50D(STA4,Q,M) MOSFET N-CH 500V 13A TO220SIS Toshiba Semiconductor and Storage	110	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	10V	400mOhm @ 6.5A, 10V	Through Hole	4V @ 1mA	38 nC @ 10 V	500 V	±30V	1800 pF @ 25 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
XPJR6604PB,LXHQ 40V; UMOS9; 0.66MOHM; S-TOGL Toshiba Semiconductor and Storage	7,017	-	询价单	数据表	U-MOSIX-H	5-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200A (Ta)	6V, 10V	0.66mOhm @ 100A, 10V	Surface Mount	3V @ 1mA	128 nC @ 10 V	40 V	±20V	11380 pF @ 10 V	AEC-Q101	-	S-TOGL™	Automotive	375W (Tc)	175°C
TK160F10N1L,LQ MOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage	914	-	询价单	数据表	U-MOSVIII-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Ta)	6V, 10V	2.4mOhm @ 80A, 10V	Surface Mount	3.5V @ 1mA	122 nC @ 10 V	100 V	±20V	10100 pF @ 10 V	-	-	TO-220SM(W)	-	375W (Tc)	175°C
TK7R4A15Q5,S4X 150V UMOS10-HSD TO-220SIS 7.4MOH Toshiba Semiconductor and Storage	400	-	询价单	数据表	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	8V, 10V	7.4mOhm @ 28.5A, 10V	Through Hole	4.5V @ 1.4mA	66 nC @ 10 V	150 V	±20V	4970 pF @ 75 V	-	-	TO-220SIS	-	46W (Tc)	175°C

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