Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 13

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK6P60W,RVQ MOSFET N CH 600V 6.2A DPAK Toshiba Semiconductor and Storage	645	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6.2A (Ta)	10V	820mOhm @ 3.1A, 10V	Surface Mount	3.7V @ 310µA	12 nC @ 10 V	600 V	±30V	390 pF @ 300 V	-	-	DPAK	-	60W (Tc)	150°C (TJ)
TK11P65W,RQ MOSFET N-CH 650V 11.1A DPAK Toshiba Semiconductor and Storage	462	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11.1A (Ta)	10V	440mOhm @ 5.5A, 10V	Surface Mount	3.5V @ 450µA	25 nC @ 10 V	650 V	±30V	890 pF @ 300 V	-	-	DPAK	-	100W (Tc)	150°C (TJ)
TK50P03M1(T6RSS-Q) MOSFET N-CH 30V 50A DP Toshiba Semiconductor and Storage	2,681	-	询价单	数据表	U-MOSVI-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Ta)	4.5V, 10V	7.5mOhm @ 25A, 10V	Surface Mount	2.3V @ 200µA	25.3 nC @ 10 V	30 V	±20V	1700 pF @ 10 V	-	-	DPAK	-	47W (Tc)	150°C (TJ)
TPH4R606NH,L1Q MOSFET N-CH 60V 32A 8SOP Toshiba Semiconductor and Storage	4,625	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	32A (Ta)	6.5V, 10V	4.6mOhm @ 16A, 10V	Surface Mount	4V @ 500µA	49 nC @ 10 V	60 V	±20V	3965 pF @ 30 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 63W (Tc)	150°C (TJ)
TK7P60W,RVQ MOSFET N CH 600V 7A DPAK Toshiba Semiconductor and Storage	1,988	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	600mOhm @ 3.5A, 10V	Surface Mount	3.7V @ 350µA	15 nC @ 10 V	600 V	±30V	490 pF @ 300 V	-	-	DPAK	-	60W (Tc)	150°C (TJ)
2SK2231(TE16R1,NQ) MOSFET N-CH 60V 5A PW-MOLD Toshiba Semiconductor and Storage	7,096	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	4V, 10V	160mOhm @ 2.5A, 10V	Surface Mount	2V @ 1mA	12 nC @ 10 V	60 V	±20V	370 pF @ 10 V	-	-	PW-MOLD	-	20W (Tc)	150°C (TJ)
TK12P60W,RVQ MOSFET N CH 600V 11.5A DPAK Toshiba Semiconductor and Storage	1,930	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	10V	340mOhm @ 5.8A, 10V	Surface Mount	3.7V @ 600µA	25 nC @ 10 V	600 V	±30V	890 pF @ 300 V	-	-	DPAK	-	100W (Tc)	150°C (TJ)
XPJ1R004PB,LXHQ 40V; UMOS9; MOSFET 1MOHM; L-TOGL Toshiba Semiconductor and Storage	2,975	-	询价单	数据表	-	5-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Ta)	6V, 10V	1mOhm @ 80A, 10V	Surface Mount	3V @ 500µA	84 nC @ 10 V	40 V	±20V	6890 pF @ 10 V	AEC-Q101	-	S-TOGL™	Automotive	223W (Tc)	175°C
TPW2R508NH,L1Q PB-F POWER MOSFET TRANSISTOR DOS Toshiba Semiconductor and Storage	10,902	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Ta)	10V	2.5mOhm @ 50A, 10V	Surface Mount	4V @ 1mA	72 nC @ 10 V	75 V	±20V	6000 pF @ 37.5 V	-	-	8-DSOP Advance	-	800mW (Ta), 142W (Tc)	150°C
TPW1500CNH,L1Q PB-F POWER MOSFET TRANSISTOR DSO Toshiba Semiconductor and Storage	6,746	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	15.4mOhm @ 19A, 10V	Surface Mount	4V @ 1mA	22 nC @ 10 V	150 V	±20V	2200 pF @ 75 V	-	-	8-DSOP Advance	-	800mW (Ta), 142W (Tc)	150°C

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